Stretchable Device Semiconductor Strain Gauge Sensitivity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current stretchable devices require strain gauges with higher sensitivity for effective load detection, and existing semiconductor strain gauges with the same impurity concentration as thin-film transistors do not meet the required sensitivity levels.
Innovation Solution
A stretchable device design incorporating semiconductor strain gauges with a higher impurity concentration than thin-film transistors, integrated into the hinges of the resin base member, which includes a combination of semiconductor and metal strain gauges to enhance sensitivity and reduce damage from loads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If semiconductor strain gauges with the same impurity concentration as thin-film transistors are used, then the strain gauge has a higher gauge factor than metal strain gauges, but the sensitivity is still insufficient for effective load detection
Solution Approach 1:
The patent changes the impurity concentration parameter of the semiconductor strain gauge, making it higher than that of the thin-film transistor. This parameter modification increases the gauge factor and sensitivity of the strain gauge, enabling effective load detection while maintaining compatibility with the TFT manufacturing process
Solution Approach 2:
The patent applies different impurity concentrations to different components: the thin-film transistor maintains its standard impurity concentration for proper transistor operation, while the semiconductor strain gauge receives a higher impurity concentration specifically to enhance its sensing performance. This localized differentiation allows each component to be optimized for its specific function
2Measurement precision
If semiconductor strain gauges with higher impurity concentration are used, then the sensitivity is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent merges the manufacturing processes of the thin-film transistor and semiconductor strain gauge into a single integrated process. Both components are formed simultaneously using the same substrate preparation, film deposition, and impurity implantation steps, with the only difference being the impurity concentration applied to each region. This integration eliminates the need for separate manufacturing lines and reduces overall process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The higher impurity concentration semiconductor strain gauges provide increased sensitivity for load detection while minimizing damage, effectively addressing the need for improved strain gauge performance in stretchable devices.
Implementation Method 1
a plurality of strain gauges disposed at the hinges. The strain gauges each include a semiconductor strain gauge made of semiconductor material at a part in a longitudinal direction
Data Source
AI summary
According to an aspect, a stretchable device includes a first stretchable resin, a resin base member, an array layer, and a second stretchable resin stacked in the order as listed. The resin base member includes: a plurality of bodies; and a plurality of hinges that couple the bodies. The array layer includes: a plurality of thin-film transistors disposed at the bodies; and a plurality of strain gauges disposed at the hinges. The strain gauges each include a semiconductor strain gauge made of semiconductor material at a part in a longitudinal direction. An impurity concentration of the semiconductor strain gauge is higher than an impurity concentration of the thin-film transistor.