PSE device and powered device of optical power supply system, and optical power supply system

The patent changes the fundamental parameter of semiconductor material from conventional materials (such as GaAs) to wide bandgap materials (such as GaN, SiC, diamond) with bandgaps of 2.4 eV or greater. This parameter change enables the use of short wavelength light (500 nm or less) which significantly improves photoelectric conversion efficiency while the materials themselves maintain good manufacturability through established semiconductor fabrication processes

The patent employs composite material structures where wide bandgap semiconductor materials are used specifically in the active regions of the semiconductor laser and photoelectric conversion element, while other parts of the device may use conventional materials. This composite approach optimizes photoelectric conversion efficiency in critical regions while maintaining overall device manufacturability

By changing to wide bandgap materials with appropriate crystal structures (such as wurtzite GaN), the patent achieves short wavelength emission (500 nm or less) with well-defined bandgap energies. These materials have mature growth techniques that can achieve the required manufacturing precision for short wavelength operation, eliminating the trade-off between wavelength and precision

The patent leverages the successful replication of conventional semiconductor manufacturing processes for wide bandgap materials. The same epitaxial growth, lithography, and fabrication techniques used for conventional semiconductors can be applied to wide bandgap materials, copying proven manufacturing methodologies to achieve the required precision without developing entirely new processes