Sub-gate Light Transmissive Area for Touch Sensitivity
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Solution Overview
Problem
Current touch control technologies, such as on-cell and in-cell touch control, face challenges with low photocurrent and reduced sensitivity and accuracy due to limitations in light irradiation and tunnel defects, which affect the fixed-point sensing function on display panels.
Innovation Solution
A display panel manufacturing method that includes forming a main gate and a sub-gate with a light transmissive area on a glass substrate, a gate insulating layer, a semiconductor layer, and metal layers to create a sub-thin film transistor (sub-TFT) with an enlarged light irradiation area, enhancing photocurrent and improving touch control sensitivity and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If in-cell touch control technology is used with top irradiation, then the touch control function can be implemented, but the photocurrent is low and sensitivity and accuracy are reduced due to tunnel area and backside defects
Solution Approach 1:
The patent inverts the conventional top-irradiation approach by implementing bottom irradiation of the sub-TFT. The light is introduced from the substrate side through the substrate and the sub-active layer, allowing light to reach the light transmissive area of the sub-gate from the bottom. This inversion of light direction avoids the tunnel area and backside defects that plague top-irradiation designs, thereby enhancing photocurrent and improving touch control sensitivity and accuracy
Solution Approach 2:
The patent introduces a vertical dimension to light propagation by implementing bottom irradiation through the substrate. Instead of horizontal top-irradiation, light travels vertically from the substrate side through multiple layers to reach the sub-TFT's light transmissive area. This dimensional change in light path enables the sub-TFT to receive light from the bottom, avoiding the harmful effects of top-irradiation while maintaining touch control functionality
2Quantity of substance
If a conventional single gate structure is used, then the device structure is simple, but the light irradiation area is limited and photocurrent is insufficient
Solution Approach 1:
The patent segments the gate structure into a main gate and a sub-gate. The sub-gate is specifically designed with a light transmissive area that allows light to pass through when irradiated from the bottom. This segmentation enables the sub-TFT to have a dedicated light-receiving region, significantly increasing the effective light irradiation area and enhancing photocurrent generation while maintaining reasonable device complexity
Solution Approach 2:
The sub-gate structure serves multiple functions: it acts as an electrical gate for the sub-TFT and simultaneously functions as a light transmissive area for bottom irradiation. This multi-functionality allows the same structural element to contribute to both device operation and light reception, maximizing photocurrent generation without proportionally increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances photocurrent, thereby improving the sensitivity and accuracy of the touch control function by enlarging the light irradiation area of the sub-TFT, addressing the limitations of existing technologies.
Implementation Method 1
A first current is generated when a bottom of the sub-TFT is irradiated with light, a second current is generated when a top of the sub-TFT is irradiated with light, and the first current is greater than the second current
Data Source
AI summary
The disclosure provides a display panel and a manufacturing method thereof. The method includes: forming a main gate and a sub-gate on a glass substrate, wherein at least a portion of the sub-gate includes a light transmissive area; sequentially forming a gate insulating layer, a semiconductor layer, and a second metal layer on the sub-gate, patterning the semiconductor layer to obtain a main active layer and a sub-active layer, and patterning the second metal layer to obtain a main source/drain and a sub-source/drain.