Substituted Aryl Onium Acid Generators for EUV Photoresists
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Solution Overview
Problem
Current EUV photoresist development faces challenges in achieving highly resolved fine features and sufficient sensitivity for wafer throughput in EUV Lithography technology, particularly in terms of low linewidth roughness and sensitivity.
Innovation Solution
The development of new acid generators and photoresist compositions that include substituted carbocyclic, aryl, or heteroaromatic groups, specifically diester moieties and onium compounds, which react with activating radiation to produce acids during lithographic processing, enhancing image resolution and sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photoresist compositions are used, then existing commercial applications can be met, but highly resolved images of submicron dimension cannot be achieved
Solution Approach 1:
The patent modifies the chemical structure of photoactive compounds by introducing specific substituted aryl groups and onium structures (sulfonium, iodonium) with particular substituent patterns. These parameter changes in molecular structure enable the compounds to generate acid more efficiently under EUV radiation, achieving both submicron resolution and adequate sensitivity for wafer throughput
Solution Approach 2:
The patent creates composite photoresist compositions combining polymer matrices with novel onium salt photoactive compounds. The composite structure integrates the imaging capabilities of the onium compounds with the structural properties of polymers, achieving enhanced resolution while maintaining processability and sensitivity required for production
2Manufacturing precision
If EUV photoresist materials are developed for highly resolved fine features, then low linewidth roughness is achieved, but sensitivity for wafer throughput is insufficient
Solution Approach 1:
The patent optimizes the molecular parameters of onium salts by varying the aryl substituents and counterions to achieve the right balance between acid generation efficiency (for sensitivity) and line edge roughness control (for precision). Specific substituent patterns on the aryl groups are designed to modulate the acid strength and diffusion characteristics
Solution Approach 2:
The patent introduces functional groups with specific local properties into the photoactive compound structure. The aryl substituents provide localized electronic effects that control acid generation, while the onium core provides the quaternary structure necessary for EUV absorption. This local quality differentiation enables simultaneous optimization of resolution and sensitivity
3Manufacturing precision
If short-wavelength imaging is utilized, then image resolution is improved, but sensitivity and wafer throughput are compromised
Solution Approach 1:
The patent modifies the photoactive compound structure to optimize absorption at short wavelengths (EUV range). The onium salts with aryl substituents are designed to have appropriate HOMO-LUMO gaps for EUV absorption, enabling efficient acid generation at these wavelengths while maintaining sufficient sensitivity for practical throughput
Solution Approach 2:
The onium salt compounds act as intermediaries that convert EUV radiation into acid. The aryl-substituted onium structure serves as a mediator that absorbs EUV photons and transforms the energy into chemical bonds breaking to release acid, bridging the gap between short-wavelength imaging and sufficient sensitivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These acid generators improve the resolution and sensitivity of photoresists, enabling the formation of submicron features and increasing wafer throughput, particularly effective for short-wavelength and EUV imaging applications.
Implementation Method 1
acid generators are provided that comprise a substituted carbocyclic, aryl, or heteroaromatic group... the acid generator comprises a structure of Formula (I)... X is sulfur or iodine... acid-labile and react in the presence of acid during lithographic processing
Data Source
AI summary
Acid generators comprising a carbocyclic or heteroaromatic group substituted with at least one diester moiety are provided. These acid generators are particularly useful as a photoresist composition component.