Semiconductor Substrate Bonding With Rigid Support for Warpage Control
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Solution Overview
Problem
The challenge in manufacturing semiconductor devices lies in appropriately bonding multiple substrates, which often suffer from warpage due to differences in thermal expansion coefficients, leading to misalignment and bonding issues.
Innovation Solution
A method involving the use of a supporting substrate with higher rigidity than the main substrate to correct and reduce warpage, followed by sequential bonding and removal of substrates to form a multi-stack array structure, ensuring precise alignment and bonding of electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If multiple substrates are bonded directly without a supporting substrate, then the manufacturing process is simpler, but warpage occurs due to stress from differing coefficients of thermal expansion, leading to misalignment and bonding defects
Solution Approach 1:
A supporting substrate with intermediate properties is introduced between the first and second substrates during bonding. This supporting substrate acts as a mediator that reduces the stress from differing thermal expansion coefficients, preventing warpage and enabling precise alignment. After bonding, the supporting substrate is removed, leaving the bonded substrates properly aligned without the complexity of direct bonding procedures.
2Manufacturing precision
If a supporting substrate with higher rigidity is used to correct warpage, then alignment precision improves, but the device complexity and number of processing steps increase
Solution Approach 1:
The supporting substrate is prepared in advance with specific rigidity properties before the bonding process begins. By pre-configuring this supporting structure, the method enables precise alignment during bonding without requiring complex real-time adjustments or sophisticated equipment, thus reducing overall process complexity while maintaining high precision.
3Stability of the object's composition
If the supporting substrate is maintained throughout the bonding process, then warpage correction is continuous, but the final device structure becomes more complex
Solution Approach 1:
The supporting substrate is used temporarily during the bonding process to maintain warpage control and ensure precise alignment. Once the bonding is complete and the substrates are properly bonded together, the supporting substrate is removed. This temporary use of the supporting substrate provides the necessary stability during manufacturing without leaving any residual complexity in the final device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively addresses warpage issues, enabling accurate alignment and bonding of substrates, resulting in a semiconductor device with improved structural integrity and reduced misalignment.
Implementation Method 1
bonding a supporting substrate to a first principal surface, on which the first structure is formed, of the first substrate. The supporting substrate is higher in rigidity than the first substrate
Implementation Method 2
a first bonded body is formed by bonding a supporting substrate to a first principal surface
Implementation Method 3
the first substrate is removed from the first bonded body
Implementation Method 4
a second bonded body is formed by bonding a second principal surface, on which the second structure is formed, of the second substrate to a third principal surface, on which the third structure is formed, of the third substrate
Implementation Method 5
the third substrate is removed from the second bonded body
Implementation Method 6
a third bonded body is formed by bonding a fourth principal surface, which is exposed after the first substrate is removed, of the first bonded body to a fifth principal surface, which is exposed after the third substrate is removed, of the second bonded body
Implementation Method 7
the supporting substrate is removed from the third bonded body
Data Source
AI summary
In a method for manufacturing a semiconductor device, a first structure is formed on a first substrate. A first bonded body is formed by bonding a supporting substrate to a first principal surface, on which the first structure is formed, of the first substrate. The supporting substrate is higher in rigidity than the first substrate. The first substrate is removed from the first bonded body. A second structure is formed on a second substrate. A third structure is formed on a third substrate. A second bonded body is formed by bonding a second principal surface, on which the second structure is formed, of the second substrate to a third principal surface, on which the third structure is formed, of the third substrate. The third substrate is removed from the second bonded body. A third bonded body is formed by bonding a fourth principal surface, which is exposed after the first substrate is removed, of the first bonded body to a fifth principal surface, which is exposed after the third substrate is removed, of the second bonded body. The supporting substrate is removed from the third bonded body.