Substrate Cleaning Apparatus with Closed Chamber Drying

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Solution Overview

Problem

Conventional semiconductor cleaning methods face challenges in effectively drying substrates without leaving residual water spots and protecting them from environmental agents, especially as wafers increase in size and complexity, leading to potential damage from pollutants and oxidation.

Innovation Solution

A substrate cleaning apparatus that uses a closed chamber with decompression to a pressure lower than atmospheric pressure, employing a nozzle system with injection holes that increase in density from the center to the edge of the substrate, and a dual-nozzle system for top and bottom surface cleaning and drying, utilizing organic solvents and nitrogen gas to efficiently dry substrates while preventing external air introduction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If deionized water and N2 gas drying are used in atmospheric conditions, then the substrate can be dried, but residual water spots remain and the substrate is exposed to environmental pollutants

Engineering Contradiction:
Improvesubstrate protection from environmental agentsVSAvoidcleaning apparatus structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements a closed chamber system that creates an inert or controlled atmosphere environment during substrate drying. The chamber is sealed to prevent outside air contamination, and N2 gas is introduced to displace atmospheric oxygen and moisture, providing both protection from environmental pollutants and effective drying through inert gas displacement of residual liquids.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

2Productivity

If N2 gas is used to dry the wafer after rinsing, then drying is achieved, but residual deionized water remains causing water spots

Engineering Contradiction:
Improvedrying speedVSAvoidsubstrate surface quality
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent employs continuous N2 gas flow throughout the drying process within the closed chamber. The gas flows continuously over the substrate surface, progressively displacing residual deionized water molecules and preventing water spot formation by maintaining constant inert atmosphere conditions rather than using intermittent drying cycles.

Inventive Principle:
Principle #20Continuity of useful action

Solution Approach 2:

The patent utilizes pneumatic principles by introducing pressurized N2 gas into the closed chamber. The gas flow dynamics create effective drying through gas-liquid displacement mechanisms, where the inert gas stream physically removes residual liquid from the substrate surface through controlled airflow patterns.

Inventive Principle:
Principle #29Pneumatics and hydraulics

3Ease of manufacture

If wafers are cleaned and dried in the atmosphere, then the process is simple, but wafers are easily damaged by environmental agents

Engineering Contradiction:
Improveprocess simplicityVSAvoidenvironmental pollution damage
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent employs a closed chamber system that acts as a protective enclosure, isolating the substrate from the external atmospheric environment. This sealed structure prevents contact with environmental pollutants, moisture, and oxygen during the sensitive cleaning and drying processes, while still allowing controlled introduction of N2 gas for drying purposes.

Inventive Principle:
Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus rapidly and efficiently dries substrates, prevents water spots, and protects them from environmental agents, ensuring effective cleaning and drying while maintaining substrate integrity.

Implementation Method 1

a decompression unit used to decompress the closed space formed by the low cover and the upper cover

Methodology Applied
Scientific EffectDecompression: Depressurisation

Implementation Method 2

a first nozzle member injecting a drying fluid onto a top surface of the substrate for drying the substrate

Methodology Applied
Scientific EffectEvaporation: Evaporation

Implementation Method 3

The chemical or deionized water applied to the top surface of the wafer is spread on the entire top surface of the wafer by a centrifugal force

Methodology Applied
Scientific EffectCentrifugal force: Centrifugal Force

Data Source

PatentUS8267103B2Method and apparatus for cleaning substrates
Publication Date: 2012.09.18 SYSTEM ENGINEERING MEGA SOLUTION CO LTD
  • US8267103B2 patent drawing
  • US8267103B2 patent drawing
  • US8267103B2 patent drawing

AI summary

Provided is an apparatus for cleaning and drying a substrate by applying a plurality of chemicals and gases to the substrate. The apparatus may include: a substrate support member including a chuck receiving a substrate; a first nozzle member injecting a drying fluid onto a top surface of the substrate for drying the substrate; a low cover including an opened top and enclosing the chuck; and an upper cover selectively closing the opened top of the low cover so as to dry the substrate in a closed space. Therefore, the apparatus dries a substrate more efficiently and protects the substrate from being contaminated by foreign pollutants. Furthermore, generation of an undesired oxidation layer on the substrate can be prevented.