Semiconductor Substrate Doping Profile with Dual Hydrogen Peaks
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Solution Overview
Problem
Existing semiconductor manufacturing methods struggle to accurately control donor concentration in semiconductor substrates due to hydrogen implantation causing crystal defects and bonding issues, which affect the performance of semiconductor devices.
Innovation Solution
A semiconductor device with a hydrogen concentration distribution featuring two peaks in the depth direction, where the donor concentration distribution also has corresponding peaks, with a flat region in between, allowing for precise control of donor concentration through hydrogen implantation and diffusion, enhancing the semiconductor substrate's characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen is implanted and diffused into a semiconductor substrate, then crystal defects are bonded and donor concentration is increased, but the donor concentration range and its distribution cannot be controlled accurately
Solution Approach 1:
The patent divides the hydrogen concentration distribution into multiple peaks at different depths rather than a single uniform distribution. This segmentation allows independent control of donor concentration at different depth regions, enabling accurate control of the donor concentration range and distribution profile in the semiconductor substrate.
Solution Approach 2:
The patent creates different hydrogen concentration characteristics at different depths by forming multiple hydrogen concentration peaks. Each peak can be optimized for specific local requirements, with the first peak addressing near-surface donor concentration control and the second peak addressing deeper region control, thereby achieving accurate overall donor concentration management.
2Ease of manufacture
If a single hydrogen concentration peak is formed, then the process is simple, but the donor concentration distribution cannot be precisely controlled at multiple depth regions
Solution Approach 1:
The patent employs multiple hydrogen implantation steps with different conditions to create segmented hydrogen concentration peaks at specific depths. This approach maintains relative process simplicity while achieving precise multi-region donor concentration control through controlled segmentation of the hydrogen distribution profile.
Solution Approach 2:
The patent transitions from controlling hydrogen concentration in a single dimension (uniform depth) to controlling it across multiple depth dimensions by forming peaks at different depths. This dimensional expansion of control allows precise donor concentration management at multiple depth regions while building upon standard hydrogen implantation processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise tuning of donor concentration, improving the performance and reliability of semiconductor devices by effectively managing crystal defects and hydrogen bonding, thus overcoming the limitations of previous methods.
Implementation Method 1
implanting and diffusing hydrogen into a semiconductor substrate
Implementation Method 2
implanting and diffusing hydrogen into a semiconductor substrate
Data Source
AI summary
A semiconductor device including a semiconductor substrate having an upper surface and a lower surface is provided. In a depth direction connecting the upper and lower surfaces of the semiconductor substrate, a donor concentration distribution includes a first donor concentration peak at a first depth, a second donor concentration peak at a second depth between the first donor concentration peak and the upper surface, a flat region between the first donor concentration peak and the second donor concentration peak, and a plurality of donor concentration peaks between the first donor concentration peak and the lower surface. The second donor concentration peak has a lower concentration than the first donor concentration peak. The donor concentration distribution in the flat region is substantially flat. The thickness of the flat region in the depth direction is 10% or more of the thickness of the semiconductor substrate.