Device Substrate Edge Wet Etching Without Semiconductor Damage

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Solution Overview

Problem

Wafer edge trimming during semiconductor device fabrication can inadvertently damage the semiconductor devices, necessitating improved methods to protect wafers and devices from damage.

Innovation Solution

A method involving the use of a chemical fluid to selectively remove the edge portion of a device substrate by wet etching, with controlled dopant concentrations and protective layers to safeguard the carrier substrate and semiconductor device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If wafer edge trimming is performed to protect wafers from damages, then wafer protection is improved, but semiconductor devices may be undesirably damaged

Engineering Contradiction:

Improvewafer protectionVSAvoiddevice damage

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The substrate edge is segmented into a sacrificial edge portion that is selectively removed, separating the protective function from the device area. This allows the edge to be trimmed without affecting the semiconductor devices on the main substrate area.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The harmful edge portion is extracted and removed from the substrate using selective etching. The sacrificial edge portion is taken out selectively, leaving the main substrate and devices intact while eliminating the source of potential damage.

Inventive Principle:

Principle #2Taking out (Extraction)

2Manufacturing precision

If chemical fluid is used to remove substrate edge, then precise edge removal is achieved, but carrier substrate may be damaged

Engineering Contradiction:

Improveedge removal precisionVSAvoidcarrier substrate integrity

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

Different regions of the substrate are given different properties through selective doping. The sacrificial edge portion has a first dopant concentration while the carrier substrate has a second dopant concentration, creating local quality differences that enable selective etching of only the edge portion.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The etching process parameters are optimized to exploit the dopant concentration difference. By controlling the etching conditions, the chemical fluid selectively removes material with the first dopant concentration (edge portion) while preserving material with the second dopant concentration (carrier substrate).

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively protects the carrier substrate and semiconductor device from damage while ensuring precise edge removal, minimizing contamination and maintaining structural integrity.

Implementation Method 1

A method involving the use of a chemical fluid to selectively remove the edge portion of a device substrate by wet etching

Methodology Applied

Scientific EffectWet etching:

Implementation Method 2

The chemical fluid has a higher etching selectivity on the device substrate than the carrier substrate due to different dopant concentrations

Methodology Applied

Scientific EffectSelective etching:

Data Source

PatentUS12581923B2Method for removing edge of substrate in semiconductor structure

Publication Date: 2026.03.17 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A method for treating a semiconductor structure includes: forming the semiconductor structure which includes a carrier substrate, a device substrate, a semiconductor device formed on the device substrate, and a bonding layer formed to bond the semiconductor device with the carrier substrate, the device substrate having an upper surface which is faced upwardly, and which is opposite to the semiconductor device; and directing a chemical fluid to impinge the upper surface of the device substrate so as to remove an edge portion of the device substrate.