Dynamic Substrate Support Gap Control for Film Uniformity

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Solution Overview

Problem

Existing substrate processing apparatuses face challenges in achieving optimal film formation quality due to inconsistent gas supply intervals between the gas introduction port and the substrate, affecting the uniformity and thickness of deposited films.

Innovation Solution

The apparatus includes a controller that adjusts the elevating operation of the substrate support member to differentiate the gap between the gas supply port and the substrate, varying the gap based on the type of gas supplied, the timing of the process, and the specific steps of the film-forming process, such as narrowing or widening the gap during purge or plasma-forming stages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the gap between the gas supply port and the substrate is kept constant, then the apparatus structure is simple, but the film formation quality and uniformity deteriorate

Engineering Contradiction:
Improvefilm formation qualityVSAvoidapparatus structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The substrate support member is made movable in the vertical direction through an elevating mechanism, allowing the gap between the substrate and gas supply port to be dynamically adjusted during different process stages. This dynamic adjustment enables optimization of gas distribution and film formation quality without requiring a complex reconfigurable gas supply port structure.

Inventive Principle:
Principle #15Dynamics

2Manufacturing precision

If the gap between the gas supply port and the substrate is narrowed, then gas distribution improves, but the risk of gas flow instability and contamination increases

Engineering Contradiction:
Improvegas distribution uniformityVSAvoidgas flow stability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The elevating mechanism periodically adjusts the substrate position between different gap configurations during the processing cycle. The substrate is positioned closer to the gas supply port during film formation stages for improved gas distribution, and positioned farther away during purge or plasma-forming stages to maintain gas flow stability and prevent contamination.

Inventive Principle:
Principle #19Periodic action

3Manufacturing precision

If the substrate position is adjusted during processing, then film uniformity improves, but the processing time increases

Engineering Contradiction:
Improvefilm uniformityVSAvoidprocessing time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The elevating mechanism enables rapid vertical adjustment of the substrate position during different process stages. The quick-response elevating system minimizes the time required for position transitions while maintaining optimal gap configurations for each processing step, thereby achieving improved film uniformity without significant processing time penalty.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS10541170B2Substrate processing apparatus and method of manufacturing semiconductor device
Publication Date: 2020.01.21 KOKUSAI DENKI KK
  • US10541170B2 patent drawing
  • US10541170B2 patent drawing
  • US10541170B2 patent drawing

AI summary

There is provided a technique, including: a process chamber in which a substrate is processed; a substrate support member configured to support the substrate; an elevator configured to elevate the substrate support member; a gas supply port configured to supply a gas to the substrate; and a controller configured to control an elevating operation of the elevator so as to differentiate an interval between the gas supply port and the substrate supported by the substrate support member, when a gas is supplied from the gas supply port.