Electric Discharge Tubes TRIZ Cases

A pneumatic manifold uses dry gas pressure to prevent water vapor entry in semiconductor processing chambers.

Vacuum-compatible cassettes enable robotic focus ring replacement without chamber venting, reducing downtime and contamination risks.

Replacing the insulated plate with a segmented tray reduces manufacturing costs while the yttrium oxide layer protects against plasma erosion.

A plasma etching method uses rare gas treatment to form a protective film on substrate side walls.

CF4 and COS plasma treatment hardens ArF resist masks, preventing silicon residue deposition during anti-reflection coating etching.

A frame-shaped heat dissipation member contacts deposition plates to maintain uniform substrate temperature and prevent deformation.

Variable density electron source stabilizes beam intensity for consistent fluorescence monitoring in plasma etch systems.

Adjusting upstream beamline pressure enhances calibration ion generation, resolving high-frequency accelerator energy width issues.

Serpentine channels in a cooling plate direct clean dry air against the window, eliminating noisy air amplifiers and reducing facility disruption.

Insulation ring isolates locking ring segments to reduce capacitor area, boosting negative bias voltage and resputter rate without raising chamber temperature.

Radial slots in a C-shaped confinement ring prevent etch stop by maintaining optimal chamber pressure during semiconductor substrate processing.

Replacing bulky step-up transformers with a solid-state power source eliminates heat-induced impedance drift during high frequency withstand voltage testing.

A movable ion optics changer switches extraction grids to adjust beam profiles.

Rib portion on lithography chamber side surface increases structural rigidity to support electro-optic lens barrel positioning.

Synchronized oscillating magnetic fields scan the substrate to maintain uniform field strength, resolving non-uniformity that limits magnetic anisotropy.

Controller varies gap between gas supply port and substrate using elevator to resolve film uniformity issues caused by static spacing.

A sample alignment method compares diffraction patterns with reference lists to determine precise tilt angles.

Rotating drum electrode with embedded magnets directs plasma for uniform barrier layer deposition, resolving coating non-uniformity at high feed speeds.

An adjustable phase shift assembly synchronizes multiple radio frequency generators using a two-dimensional trace and movable contact point.

Dynamic quadrupole excitation minimizes aberrations and expands the spectral field of view in EELS mode without compromising EFTEM performance.

Radial electron emission from a curved hot cathode eliminates alignment sensitivity and particle vapor accumulation, enabling longer uniform radiation lines.

A vertically arranged substrate processing system combines static and pass-by chambers within a single machined metal block.

A pulsed plasma etch method applies a negative bias during the ON state and zero bias during the OFF state to control etch by-products.

A dual beam system mills a sloped trench and deposits a protective layer to expose cross sections for scanning electron microscopy.

Microwave-excited hydrogen plasma selectively dissociates side chain bonds to cure photoresist masks, reducing dimensional variation and linewidth roughness.