Semiconductor Substrate Grinding with Energy-Curable Support Film
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Solution Overview
Problem
Conventional substrate grinding methods for semiconductor devices are limited to hard substrates and result in rapid degradation of substrate strength, making them prone to damage and requiring additional cleaning processes, thus reducing manufacturing efficiency.
Innovation Solution
A method involving the attachment of a support film to the substrate using energy-curable glue, which is cured and then removed in a non-traverse direction to reduce substrate thickness, maintaining bonding strength during grinding while allowing easy removal without additional processing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional grinding methods are used on substrates, then substrate thickness can be reduced, but substrate strength rapidly degrades and the substrate becomes prone to damage
Solution Approach 1:
A support film is attached to the substrate before grinding to serve as an intermediary that reinforces the substrate during the grinding process. The support film prevents substrate damage and maintains structural integrity while the substrate thickness is being reduced, thereby resolving the contradiction between thickness reduction and strength maintenance.
Solution Approach 2:
The support film is attached to the substrate in advance before the grinding process begins. This preliminary action prepares the substrate to withstand the mechanical stresses of grinding without damage, enabling safe thickness reduction while maintaining adequate strength throughout the process.
2Volume of moving object
If conventional grinding methods are used on substrates, then substrate thickness can be reduced, but additional cleaning processes are required which reduce manufacturing efficiency
Solution Approach 1:
The support film acts as a mediator that enables a cleaner grinding process. By providing external support during grinding, the substrate experiences less mechanical stress and generates fewer contaminants, eliminating the need for additional cleaning processes and thereby improving manufacturing efficiency while achieving thickness reduction.
Solution Approach 2:
The invention extracts and removes the unnecessary cleaning process from the manufacturing sequence. By using the support film during grinding, the process directly produces a clean substrate surface without requiring separate cleaning steps, thus extracting the inefficient cleaning operation from the production flow and improving overall productivity.
3Ease of operation
If a support film is attached to the substrate, then substrate workability is maintained during grinding, but the support film must be removed afterward
Solution Approach 1:
The glue's bonding characteristics are changed by adjusting its formulation and curing parameters. The glue is designed to have strong initial bonding that maintains substrate workability during grinding, then allows for easy removal afterward through controlled parameter changes such as temperature or chemical treatment, thereby resolving the contradiction between maintaining workability and simplifying the removal process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances process efficiency by maintaining substrate workability and preventing damage during grinding, allowing for efficient reduction of substrate thickness and subsequent chip separation without the need for unnecessary cleaning or chemical treatments.
Implementation Method 1
A support film is attached to the first main surface using a glue. The glue is cured by applying energy thereto.
Data Source
AI summary
A method of grinding a substrate is provided. A substrate including a first main surface having a semiconductor layer formed thereon and a second main surface opposed to the first main surface is prepared. A support film is attached to the first main surface using a glue. The second main surface of the substrate is ground so as to reduce a thickness of the substrate. The support film is removed from the first main surface by applying force to the support film in a non-traverse direction.


