Inorganic Substrate Laser Etching for Inner Wall Shape Control
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Solution Overview
Problem
Existing methods for processing inorganic material substrates, such as glass, lack sufficient controllability over the shape of processed features, particularly in achieving precise and desired inner wall shapes during etching treatments.
Innovation Solution
A method involving laser radiation to form altered portions within the substrate, followed by masking and selective etching, allows for controlled exposure and removal of these portions to achieve precise shape control, utilizing a Yb:YAG picosecond laser and wavelength conversion for accurate processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a laser is condensed inside a substrate to change a portion on which the laser is condensed and then an inorganic material substrate is subjected to an etching treatment, then processing of the substrate can be achieved, but the controllability of the processing shape (inner wall shape) is insufficient
Solution Approach 1:
The patent divides the etching process into multiple stages with different etching conditions. Specifically, a first etching treatment is performed under first etching conditions to form an initial processed shape, followed by a second etching treatment under second etching conditions to form a final processed shape. This segmentation allows independent optimization of each etching stage to achieve both high precision and ease of control.
Solution Approach 2:
The patent employs different etching conditions (parameters) for different etching stages. The first etching conditions differ from the second etching conditions in terms of etching solution concentration, temperature, or etching time. By changing these parameters between stages, the patent achieves different etching rates and selectivities, thereby improving processing shape controllability while maintaining operational simplicity.
2Shape
If conventional laser assisted etching is used, then substrate processing can be performed, but the inner wall shape cannot be controlled to become a desired shape
Solution Approach 1:
The patent performs a first etching treatment before the second etching treatment to create an intermediate processed shape. This preliminary action prepares the substrate for the final etching step by removing material in a controlled manner, enabling the subsequent second etching to achieve the desired precise inner wall shape more effectively.
Solution Approach 2:
The patent uses periodic action by implementing multiple sequential etching treatments with different conditions. The first etching treatment and second etching treatment are performed in sequence with different etching parameters, allowing progressive refinement of the processed shape to achieve high shape accuracy for the inner wall.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the controllability of processed shapes, reducing surface irregularities and enabling the formation of smooth, precise features like linear grooves and holes, with improved accuracy and precision in substrate cutting or segmentation.
Implementation Method 1
a first step of forming a plurality of altered portions inside an inorganic material substrate transparent to a laser by means of radiation of the laser to the inorganic material substrate
Implementation Method 2
forming a plurality of altered portions inside an inorganic material substrate transparent to a laser by means of radiation of the laser
Implementation Method 3
a third step of performing an etching process on the inorganic material substrate using the mask and removing the altered portions
Data Source
AI summary
In a method of processing a substrate, in a second step, only some of a plurality of altered portions are exposed from an opening portion of a mask, and the remaining portions are not exposed. In this case, at the time of etching in a third step, an etching rate may be made different between the altered portions exposed from the opening portion of the mask and the altered portions which are not exposed. Accordingly, it becomes easier to obtain a desired processed shape by adjusting the altered portions exposed from the opening portion of the mask and the altered portions which are not exposed.