Substrate Treating Monolayer for EUV Resist Collapse Prevention
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Solution Overview
Problem
Existing semiconductor fabrication processes face challenges in forming minute and reliable patterns due to resist pattern collapse and bridge defects during etching, particularly in EUV lithography, where conventional adhesion promoters are thick and inefficient.
Innovation Solution
A substrate treating composition comprising a first and second monomer, an acid, and a solvent is used to form a hydrophobic monolayer on the substrate, which acts as an adhesion promoter, allowing for precise etching and reducing bridge defects by forming patterns with a thickness of about 3 nm or less.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional adhesion promoters are used, then adhesion is provided, but the adhesion promoter layer is thick and causes resist pattern collapse
Solution Approach 1:
The patent changes the thickness parameter of the adhesion promoter layer from conventional thick layers to an ultrathin layer (about 3 nm or less). This is achieved by using a monolayer formed from a composition containing specific monomers (Formula 1 and Formula 7) that self-assemble into extremely thin films, thereby maintaining adhesion functionality while preventing resist pattern collapse that occurs with thicker adhesion promoters.
Solution Approach 2:
The patent employs a monolayer thin film as the adhesion promoter instead of conventional thick adhesion promoter layers. This ultrathin film (about 3 nm or less) provides the necessary adhesion between the substrate and photoresist pattern while being thin enough to prevent pattern collapse, effectively using thin film technology to resolve the contradiction between adhesion strength and layer thickness.
2Reliability
If conventional adhesion promoters are used, then adhesion is provided, but bridge defects occur during etching
Solution Approach 1:
The patent changes the thickness parameter of the adhesion promoter to about 3 nm or less, which eliminates bridge defects during etching. The ultrathin monolayer formed from the specific composition (containing monomers of Formula 1 and Formula 7) provides sufficient adhesion while being thin enough to allow complete etching without leaving residual material that would cause bridge defects between patterns.
Solution Approach 2:
The patent extracts only the essential adhesion function from conventional thick adhesion promoter layers by using an ultrathin monolayer. This extracted thin film provides the necessary adhesion while removing the excess material thickness that causes bridge defects during subsequent etching processes, thereby separating the adhesion function from the harmful thickness.
3Manufacturing precision
If EUV lithography is used for miniaturization, then minute patterns are formed, but resist pattern collapse occurs
Solution Approach 1:
The patent changes the thickness parameter of the adhesion promoter layer to about 3 nm or less, which provides sufficient support for minute EUV patterns without causing collapse. The ultrathin monolayer formed from the specific composition maintains pattern stability during EUV lithography by providing adhesion without the excessive thickness that would interfere with the minute pattern geometry and cause collapse.
Solution Approach 2:
The patent uses an ultrathin monolayer film (about 3 nm or less) as the adhesion promoter to support minute EUV patterns. This thin film provides the necessary mechanical support and adhesion for pattern stability while being thin enough to accommodate the minute dimensions of EUV patterns without causing collapse, effectively using thin film technology to enable both miniaturization and pattern stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The monolayer effectively prevents resist pattern collapse and enables accurate formation of minute patterns with reduced bridge defects, enhancing the reliability and precision of semiconductor device fabrication.
Implementation Method 1
The monolayer includes a dehydration-condensation product of the first monomer and the second monomer
Implementation Method 2
the monolayer is bonded to the substrate by a Si—O bond
Implementation Method 3
forming a hydrophobic monolayer on the substrate
Data Source
AI summary
Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.X—Si(R1)2(R2) [Formula 1]Y—Si(R3)3 [Formula 7]