Substrate Patterning with Hydrophobic Masking and Etch Relief
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Solution Overview
Problem
The existing processes for creating patterns on a substrate for microelectronic components through photolithography are time-consuming and costly due to the use of resins, solvents, and cleaning solutions, and the resin removal step is complex.
Innovation Solution
A process involving bonding a handle-substrate with raised elements to a substrate, forming a hydrophobic layer on certain areas, separating the handle-substrate, and etching the exposed areas with an aqueous solution to create patterns, eliminating the need for photolithography steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography steps (spreading resin, exposing, developing, etching, stripping) are used to create patterns on substrates, then patterns can be formed on substrates for microelectronic components, but the process becomes time-consuming and costly due to multiple steps and consumption of resins, solvents, and cleaning solutions
Solution Approach 1:
The patent extracts and eliminates the photolithography steps (resin spreading, exposing, developing, stripping) from the pattern formation process. Instead, it uses a simplified approach where a mask layer with pre-formed patterns is directly transferred to the substrate through selective adhesion, removing the time-consuming photolithography sequence while maintaining pattern formation capability
Solution Approach 2:
The mask patterns are prepared in advance on the mask layer before contact with the substrate. The adhesion properties are pre-configured through surface treatment or coating, allowing direct pattern transfer upon contact without requiring real-time photolithography processing steps
2Manufacturing precision
If photolithography steps with resins and cleaning agents are used, then patterns can be created on substrates, but the process generates significant costs due to consumption of resins, solvents, and cleaning solutions
Solution Approach 1:
The patent removes the chemical-intensive photolithography steps that consume resins, solvents, and cleaning agents. The pattern transfer is achieved through physical adhesion mechanisms rather than chemical processing, eliminating the need for these consumable chemicals
Solution Approach 2:
The mask layer's surface properties (adhesion or non-adhesion) are engineered to automatically control pattern transfer without requiring external chemical agents. The system uses its own inherent surface characteristics to achieve pattern formation, eliminating dependence on external chemical consumables
3Ease of manufacture
If the resin removal step is performed to clean the substrate after photolithography, then the substrate is cleaned for subsequent processing, but the step becomes complex requiring aggressive cleaning agents that must preserve surface integrity
Solution Approach 1:
The patent eliminates the resin removal step entirely by not using photolithography-based resins in the first place. Pattern formation is achieved through mask layer adhesion without requiring subsequent chemical stripping or aggressive cleaning processes
Solution Approach 2:
The cleaning function is segmented into simple physical separation - the mask layer is either naturally non-adhesive in pattern areas or can be easily removed from the substrate, avoiding the need for complex chemical cleaning processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process reduces process duration and costs by allowing patterns to be created efficiently on multiple substrates using a reusable handle-substrate, without the complexity of resin removal.
Implementation Method 1
Form a hydrophobic layer on the first areas of the thin layer... Contact the substrate of interest with an aqueous solution comprising the etching agent, thereby etching the material sensitive to the etching agent present in the second areas of the thin layer
Implementation Method 2
Contact the substrate of interest with an aqueous solution comprising the etching agent, thereby etching the material sensitive to the etching agent present in the second areas of the thin layer
Data Source
Figure 1A~1J
Figure 2~3F
Figure 4A~5C
AI summary
This description relates to a process comprising the following steps: a) Bonding a handle substrate (100) comprising raised elements (120) to a substrate of interest (200) comprising a support substrate (210) covered by a thin layer (220) comprising a material sensitive to an etching agent, whereby the thin layer (220) comprises first zones (Z1) not covered by the raised elements (120) and second zones (Z2) covered by said elements (120); b) Contacting the assembly obtained with a solution comprising a hydrophobic agent, to cover the first zones (Z1) with a hydrophobic film (130); c) Separating the two substrates (100, 200); d) Contacting the substrate of interest (200) with a solution containing the etching agent, thereby etching the material sensitive to the etching agent present in the second zones (Z2) and forming patterns (250) in relief.