Substrate Processing Composition for Lithography Edge Bead Removal
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Solution Overview
Problem
Conventional resin-based chemically amplified resists fail to meet the demands of resolution, sensitivity, and pattern roughness in extreme ultraviolet or electron beam lithography, and the edge rinsing step using metal-containing resist compositions leads to contamination and deterioration of semiconductor devices due to metal residues and instability of the underlying film.
Innovation Solution
A substrate processing composition comprising an organic solvent and additives, including a compound represented by Chemical Formula 1 (R4N+HF2−) and an organic sulfonic acid, is used to suppress metal contamination and improve the stability of the underlying film during the edge rinsing and cleaning steps in lithography processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resin-based chemically amplified resists are used in extreme ultraviolet or electron beam lithography, then the lithography process can be performed, but the resolution, sensitivity, and pattern roughness requirements cannot be met simultaneously
Solution Approach 1:
The patent changes the chemical composition parameters of the resist material by introducing metal-containing compounds (such as organometallic complexes) to replace conventional resin-based chemically amplified resists. This parameter change enables simultaneous achievement of high resolution, high sensitivity, and low pattern roughness in extreme ultraviolet and electron beam lithography processes.
2Ease of operation
If edge rinsing step is performed using metal-containing resist composition, then edge beads can be removed, but substrate and equipment contamination occurs due to metal residues
Solution Approach 1:
The patent extracts and removes metal-containing components from the resist composition through a dedicated cleaning step using a substrate processing composition. This extraction process eliminates metal residues from the substrate and equipment surfaces after the edge rinsing step, preventing contamination while maintaining the edge bead removal function.
Solution Approach 2:
The patent introduces a substrate processing composition as an intermediary substance between the edge rinsing step and subsequent processing steps. This intermediary composition contains chelating agents that bind to metal ions, facilitating their removal from the substrate surface and preventing contamination of equipment and subsequent process steps.
3Ease of operation
If edge rinsing solution is used to remove edge beads, then edge portion can be cleaned, but the underlying film thickness is reduced and solution stability deteriorates over time
Solution Approach 1:
The patent changes the chemical parameters of the edge rinsing solution by selecting specific organic solvents and additives with appropriate stability characteristics. The substrate processing composition uses stabilized chelating agents and surfactants that maintain solution stability over time while effectively cleaning the edge portion without reducing underlying film thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces substrate and equipment contamination, prevents deterioration of electrical properties, and enhances the stability and solubility of the underlying film over time, improving process efficiency and semiconductor device performance.
Implementation Method 1
the additives include a compound represented by Chemical Formula 1 below and an organic sulfonic acid... R4N+HF2−
Implementation Method 2
a substrate processing composition comprising an organic solvent and additives
Implementation Method 3
the additives include a compound represented by Chemical Formula 1 below and an organic sulfonic acid
Data Source
AI summary
There provided a substrate processing composition which is a composition for processing a substrate coated with a metal-containing resist composition. The substrate processing composition includes an organic solvent, and additives, and the additives include an organic fluoro acid and an organic sulfonic acid. There is provided a substrate processing method which includes applying a metal-containing resist composition on a substrate; processing the substrate using the substrate processing composition; and forming a pattern of a metal-containing resist film on the substrate.