Substrate Processing Apparatus Pressure Change Rate Optimization
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in achieving a fast pressure change rate due to a large processing space volume, making it difficult to realize a wide pressure range from 0.01 Torrs to 5 Bars within a short time, especially when trying to remove impurities from thin films on substrates with high aspect ratios and high impurity content.
Innovation Solution
The substrate processing apparatus minimizes the exhaust space by incorporating a process chamber with a through-hole and a substrate support shaft, an inner lid part that moves vertically to define a sealed processing space, and a filling member to connect the processing space to the exhaust passage, allowing for efficient gas exchange and pressure control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the processing space volume is increased to accommodate the substrate support and exhaust space, then the substrate processing capability is improved, but the pressure change rate deteriorates
Solution Approach 1:
The processing space is segmented into a main chamber and a separate exhaust space connected through a restricted passage. This segmentation allows the main processing space to maintain adequate volume for substrate processing while the exhaust space with restricted connection provides controlled pressure change pathways, resolving the contradiction between processing space volume and pressure change rate.
Solution Approach 2:
A restricted passage acts as an intermediary element between the processing space and exhaust space. This intermediary structure controls the flow of gas between the two spaces, enabling fast pressure changes by regulating the exhaust flow rate without requiring the entire processing space to be small, thus maintaining both adequate processing volume and fast pressure change capability.
2Speed
If the exhaust space is minimized to achieve fast pressure change rate, then the pressure change rate is improved, but the substrate processing capability deteriorates
Solution Approach 1:
The system is divided into a main processing chamber with adequate volume for substrate processing and a separate minimized exhaust space. The segmentation allows each space to optimize its function: the processing chamber maintains volume for proper substrate processing while the exhaust space is minimized for fast pressure changes, connected through a restricted passage that controls gas flow between them.
Solution Approach 2:
The restricted passage serves as an intermediary that decouples the volume requirements of the processing space from the pressure change requirements. It allows the exhaust space to be minimized for fast pressure changes while still providing adequate processing space volume, as the restricted passage controls the effective exhaust flow without requiring large exhaust space volume.
3Object-affected harmful factors
If a wide pressure range from 0.01 Torrs to 5 Bars is implemented, then the impurity removal capability is improved, but the process time increases
Solution Approach 1:
The substrate processing method employs periodic alternation between high-pressure and low-pressure atmospheres. This periodic action enables efficient impurity removal by repeatedly changing pressure conditions, allowing the system to achieve wide pressure range benefits for impurity removal while maintaining short cycle times through optimized pressure transition speeds facilitated by the minimized exhaust space and restricted passage configuration.
Solution Approach 2:
The restricted passage configuration provides preliminary anti-action by controlling the exhaust flow rate before pressure changes occur. This pre-control mechanism enables faster pressure transitions by anticipating and preparing the gas flow pathways, reducing the time required to achieve wide pressure range conditions for impurity removal without requiring extended process times.
Data Source
AI summary
The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing through a pressure change between a high pressure and a low pressure. The substrate processing apparatus includes: a process chamber (100) comprising a chamber body (110) which has an opened upper portion and in which a through-hole (150) is defined in a bottom surface thereof, and a top lid (140) coupled to the upper portion of the chamber body (110) to define an inner space (S1); a substrate support (200) comprising a substrate support plate (210) which is installed in the process chamber (100) and on which a substrate (1) is seated on a top surface thereof, and a substrate support shaft (220) installed to pass through the through-hole (150) so as to support the substrate support plate (210).