Substrate Processing Apparatus Uniform Trimming
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Solution Overview
Problem
Existing substrate processing methods face challenges in achieving uniform critical dimensions (CD) of circuit patterns due to uneven trimming, requiring additional etching processes and lacking precise control over trimming amounts, especially at the peripheral portions of substrates.
Innovation Solution
A substrate processing method and apparatus that utilize independently supplied first and second trimming gases under a plasma atmosphere, with the second trimming gas controlling the trimming amount at the peripheral portions through additional gas inlets, allowing for precise adjustment of the thin film layer thickness and uniformity by varying the kinds, concentrations, and flow rates of the gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single trimming gas is supplied through a center gas inlet, then the trimming process is simple, but the trimming amount is not uniform across the substrate, especially at peripheral portions
Solution Approach 1:
The gas supply unit is segmented into multiple gas inlets: a center gas inlet for supplying a first trimming gas to the central region, and additional gas inlets positioned at peripheral regions for supplying a second trimming gas. This segmentation allows independent control of trimming amounts at different substrate locations, resolving the uniformity issue while maintaining manageable complexity through modular gas distribution
Solution Approach 2:
Different trimming gases are supplied to different regions of the substrate based on local requirements. The center gas inlet supplies trimming gas optimized for central pattern structures, while additional gas inlets supply trimming gas optimized for peripheral pattern structures. This local quality approach ensures each region receives appropriate trimming conditions for uniform critical dimensions across the entire substrate
2Manufacturing precision
If additional etching processes are added to achieve uniform trimming, then the critical dimensions can be controlled, but the process complexity and time increase
Solution Approach 1:
The trimming function is merged into the existing plasma deposition process by incorporating multiple gas inlets into the deposition chamber. The first trimming gas and second trimming gas are supplied simultaneously with the deposition gas, allowing trimming and deposition to occur in the same process step. This eliminates the need for separate etching processes while maintaining precise control of critical dimensions
Solution Approach 2:
The trimming action occurs continuously during the plasma deposition process rather than requiring separate discrete steps. By supplying trimming gases through multiple inlets during the deposition cycle, the system performs both trimming and deposition simultaneously, maintaining continuous useful action and improving productivity without sacrificing precision
3Manufacturing precision
If trimming gas flow rates are increased to improve trimming uniformity, then the trimming effectiveness improves, but the plasma atmosphere stability deteriorates
Solution Approach 1:
The total trimming gas flow is segmented into multiple streams through different gas inlets. Each inlet supplies a portion of the total trimming gas at optimized flow rates for its specific region. This segmentation allows the system to achieve effective trimming uniformity across the substrate while maintaining stable plasma conditions in each local region, avoiding the plasma instability that would result from a single high-flow gas supply
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables uniform trimming and thin film deposition across the substrate, ensuring consistent critical dimensions and reducing the need for additional etching processes, thereby improving the precision and efficiency of the substrate processing.
Implementation Method 1
applying plasma on a substrate including a pattern structure
Implementation Method 2
trimming the pattern structure by independently supplying a first trimming gas and a second trimming gas, under a plasma atmosphere
Implementation Method 3
forming a thin film layer on a side surface and an upper surface of the pattern structure after the pattern structure is trimmed
Data Source
AI summary
Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.