Electric Discharge Tubes TRIZ Cases

Sulfur hexafluoride plasma removes silicon nitride without polymer deposition, resolving fluorocarbon clogging in narrow mask openings.

Segmented solenoid coil filter adjusts resonance frequency via varying winding pitches to block high frequency noise in plasma processing systems.

A position controllable magnet plate uses worm gears to adjust magnetic field orientation.

A template mask bonds to a semiconductor workpiece for direct pattern transfer etching.

Asymmetric target placement and customized magnet configurations equalize magnetic fields, resolving uniformity issues in compact sputtering apparatuses.

A beam extraction slit structure with a plasma meniscus fixing part stabilizes the ion source interface.

Pulsed RF signals generate monoenergetic ions to etch top material layers at controlled rates, resolving high angular spread and low etch rate contradictions.

An arbitrary waveform generator synchronizes pulsed lasers with a high-speed deflector to capture nanosecond-scale material dynamics.

A baffle assembly uses a curved wall to confine plasma within the processing space.

Curved protecting tubes accommodate thermal deformation of flexible electrodes, ensuring uniform film thickness on vertically stacked semiconductor wafers.

Multiple insulation segments enclose a conductor to redistribute electrical stress and prevent breakdown.

A substrate processing system uses endpoint sensor time traces to predict edge ring erosion and adjust setpoints for uniform etching.

Alternating wavelength measurements prevent signal saturation and reduce noise components for stable end-point detection.

A multi-beam writing system applies coarser exposure grids to secondary pattern regions.

Pivoting pins adapt the charger head to global standards, eliminating multiple adapters and reducing travel inconvenience.

A movable substrate support adjusts its vertical position relative to a stationary cover ring during semiconductor deposition processes.

A preliminary organic protective film prevents lateral expansion of etched recesses, suppressing bowing and maintaining manufacturing precision.

A four-in-one electrical connector socket integrates power and data transmission functions within a compact assembly.

A blanker aperture array enables complementary e-beam lithography patterning.

Oxygen plasma passivates silicon nitride surfaces to enable uniform lateral etching in high aspect ratio trenches.

A source-conversion unit forms a slant virtual multi-source array to project multiple probe spots onto a sample surface.

A method removes an amorphous protective layer using a solvent medium that etches the coating faster than the intermediate substrate.

A pulsed-voltage waveform generator establishes a nearly constant sheath voltage at the biasing electrode to control ion energy distribution during plasma processing.

A film forming system shield with a slit and cathode magnet moves along a scanning direction to control particle trajectories.

An intermediary metal layer prevents photoresist residue during dry etching, ensuring clean aperture surfaces and higher manufacturing yield.

A modularized plasma poling apparatus polarizes polymer thin films using a shadow mask and grounded workpiece carrier.

Controlling Ca-segregated phase grain diameter below 10 μm prevents hot rolling cracks and stabilizes film formation at elevated sputtering powers.

A multi charged particle beam writing apparatus measures beam positions using a minimum number of beams necessary for measurement reproducibility.

A thermal-transfer apparatus uses thermionic devices and nano-fluids to transfer electrons between electrodes for cooling.

Plasma heating recrystallizes silicon carbide focus rings to form dense surfaces.

A guard aperture isolates the control aperture electric field from the plasma sheath to manage ion trajectories.

A substrate sensor unit integrates a coil and SAW resonator to transmit temperature data via electromagnetic waves.

A sensor with a conversion element and light-sensitive detector measures beamlet positions using a two-dimensional pattern of blocking regions.

Acquiring multiple holograms at varying electron beam energies to extract detailed atomic and structural information from samples.

Segmented joystick mechanism allows accurate frame feeding under sterilization covers, preventing unintended movements during intravascular treatments.

Sequential material removal exposes thin lamellas for analysis, resolving the trade-off between analytical resolution and process time.

Segmented gas inlets supply independent trimming gases to resolve peripheral non-uniformity during plasma processing.

A vertically moving inner liner minimizes process gas loss and by-product accumulation during substrate etching.

A curved electrode plasma device generates a linear beam of reactive gas species for rapid surface treatment.

A polygon-shaped substrate processing chamber uses microwave radiation and vacuum pumping to remove gases from multiple wafers simultaneously.

Microwave heating vaporizes PFAS from soil and asphalt, enabling plasma dissociation at lower energy than incineration.

Curved diffuser plates with graded hollow cathode cavities address center-thick deposition profiles in large area PECVD systems.

A molybdenum tubular target uses a protective device to separate the inner surface from cooling media.

Multi-exposure e-beam lithography distributes writing tasks across parallel beams to reduce cycle time while maintaining high imaging resolution.

A beam separator uses magnetic and electric fields to deflect secondary electrons at large angles while keeping the primary beam path straight.

Three stacked optical modules replace large beam splitters to lower component costs while maintaining alignment precision.

Mixed gas composition controls reaction by-products to enhance etching profile verticality while maintaining mask integrity during boron film processing.

Plasma generator and filament unit activate source gases into radicals, resolving low activation efficiency in organic light-emitting display manufacturing.

Replacing fired ceramic with press-fitted resin plugs cuts manufacturing costs and inhibits arc discharge in semiconductor apparatuses.

Plasma oxidation transforms deposited films into oxide and nitride layers, generating interlayer stress to peel contaminants from reaction containers.