Substrate Support Coating for Uniform Film Thickness

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Solution Overview

Problem

In semiconductor device manufacturing, there is a challenge in achieving uniform film thickness and suppressing metal contamination on substrates during the film-forming process.

Innovation Solution

A substrate support system with metal oxide and non-metal materials is used to support substrates in a process chamber, where the support columns and pins are coated with metal oxide or non-metal films to prevent metal contamination and ensure uniform gas flow, thereby improving film thickness uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If metal support columns and pins are used to support substrates, then structural strength and stability are improved, but metal contamination of substrates and films occurs

Engineering Contradiction:
Improvestructural strengthVSAvoidmetal contamination
Core Design Contradiction:
StrengthVSObject-affected harmful factors

Solution Approach 1:

A coating layer made of metal oxide or non-metal material is applied on the surface of the metal support columns and pins. This coating acts as an intermediary between the metal support structure and the substrate, preventing direct contact and thus preventing metal contamination while maintaining the structural strength of the metal support.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Stability of the object's composition

If metal support structures are used, then mechanical stability is improved, but film thickness uniformity deteriorates due to metal contamination

Engineering Contradiction:
Improvemechanical stabilityVSAvoidfilm thickness uniformity
Core Design Contradiction:
Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The coating layer of metal oxide or non-metal material serves as a barrier that prevents metal atoms from transferring to the substrate during the film formation process. This eliminates metal contamination that would otherwise cause non-uniform film thickness, while the underlying metal support structure continues to provide mechanical stability.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Device complexity

If metal support components are used, then device complexity is reduced, but metal contamination increases

Engineering Contradiction:
Improvedevice complexityVSAvoidmetal contamination
Core Design Contradiction:
Device complexityVSObject-generated harmful factors

Solution Approach 1:

Instead of replacing the simple metal support structure with a complex non-metal alternative, a relatively simple coating layer is applied to the metal support. This coating layer effectively prevents metal contamination while adding minimal complexity to the overall device structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively suppresses metal contamination and enhances the uniformity of film thickness on substrates, improving the overall quality of semiconductor devices.

Implementation Method 1

the plurality of supports includes at least a contact portion configured to make contact with the plurality of substrates and made of at least one selected from the group of a metal oxide and a non-metal material

Methodology Applied
Scientific EffectPhysical barrier (coating): Coatings

Implementation Method 2

a heater configured to heat the plurality of substrates accommodated in the process chamber

Methodology Applied
Scientific EffectThermal heating: Heating

Data Source

PatentUS11929272B2Substrate processing apparatus, substrate support, and method of manufacturing semiconductor device
Publication Date: 2024.03.12 KOKUSAI DENKI KK
  • US11929272B2 patent drawing
  • US11929272B2 patent drawing
  • US11929272B2 patent drawing

AI summary

There is provided a technique that includes a substrate support including a support column made of metal and a plurality of supports installed at the support column and configured to support a plurality of substrates in multiple stages; a process chamber configured to accommodate the plurality of substrates supported by the substrate support; and a heater configured to heat the plurality of substrates accommodated in the process chamber, wherein the plurality of supports includes at least a contact portion configured to make contact with the plurality of substrates and made of at least one selected from the group of a metal oxide and a non-metal material.