Superconducting Memory Output Circuit With TDM for Higher Bit Density

The patent divides the memory system into multiple banks, each with independent read and write circuits. This segmentation allows parallel operations across banks, improving overall memory speed while keeping each individual bank's manufacturing complexity manageable. The memory array is organized into multiple independent units that can be manufactured and tested separately before integration.

The patent implements universal read and write circuits that can operate across multiple memory banks using the same control logic and data paths. The read circuit and write circuit are designed as multi-functional units that can service any bank through time-division multiplexing, reducing the total number of specialized circuits needed and simplifying manufacturing while maintaining high-speed access to all banks.

By organizing memory into multiple independent banks with separate read and write circuits, the patent isolates potential failures to specific banks rather than affecting the entire memory array. This segmentation improves reliability as failures in one bank do not propagate to other banks, while the total capacity is maintained through the aggregation of all banks.

The patent introduces control circuits and multiplexers as intermediary elements between the memory banks and the external interface. These intermediaries manage data flow and control signals, providing error detection and correction capabilities, and ensuring reliable operation across the expanded memory capacity through systematic control and validation.

The patent merges the read and write data paths into shared physical circuits that operate at different time intervals through multiplexing. The same data bus and control logic are reused for both reading from and writing to memory banks, effectively doubling the utilization of these circuits and increasing bit density while avoiding the need for completely separate read and write infrastructure.

The patent implements periodic time-division multiplexing where read operations and write operations are alternated in regular time slots. Control signals periodically switch between read mode and write mode, allowing the same physical circuits to serve both functions. This periodic action increases effective bit density by utilizing circuits more intensively while maintaining manageable complexity through regular, predictable operation patterns.

By dividing the memory into multiple independent banks, the patent enables simultaneous access to different banks through parallel read and write operations. While each individual bank maintains fast access times, the overall system capacity increases because multiple banks can be accessed concurrently, effectively reducing the average access time across the total memory capacity.

The patent implements continuous operation where read and write circuits alternate servicing different banks without idle time. While one bank is being read from, another bank can be written to, ensuring that the memory system continuously performs useful operations across all banks. This eliminates wait states and maintains high throughput as memory capacity scales.