Supercritical CO2 Nozzle Design for Semiconductor Drying
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Solution Overview
Problem
Existing supercritical CO2-based drying fluid removal processes for semiconductor substrates are time-consuming and require large volumes of CO2, leading to increased processing time and reduced productivity due to the formation of vortices and recirculation loops that hinder efficient fluid displacement and residue removal.
Innovation Solution
A substrate processing chamber design featuring a plurality of nozzles or slits that minimize recirculation loops and vortices, allowing for efficient delivery of supercritical CO2 across wafer surfaces to rapidly remove drying fluids and residues, with optimized nozzle and slit configurations to enhance fluid rinsing efficiency and reduce CO2 usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If existing supercritical CO2-based drying fluid removal processes are used, then drying fluid and residues can be removed from substrate surfaces, but the process is time-consuming and requires large volumes of CO2 due to vortices and recirculation loops
Solution Approach 1:
The chamber is segmented into multiple zones with strategically positioned nozzles and exhaust ports. The nozzles are arranged to create distinct flow paths that prevent recirculation, dividing the fluid removal process into efficient sequential stages across different chamber regions.
Solution Approach 2:
The invention introduces optimized spatial positioning of nozzles and exhaust ports in three-dimensional space. By carefully positioning these components at specific heights, angles, and locations within the chamber, the design creates directional flow patterns that eliminate recirculation loops and vortices, transforming the fluid dynamics from two-dimensional chaotic flow to controlled three-dimensional linear flow.
2Productivity
If existing supercritical CO2-based drying fluid removal processes are used, then drying fluid can be removed from substrate surfaces, but large volumes of CO2 are required, increasing cost and reducing efficiency
Solution Approach 1:
The design extracts and eliminates the harmful recirculation loops and vortices from the chamber flow pattern. By removing these inefficient flow features through optimized nozzle and exhaust port positioning, the system achieves effective drying fluid removal with minimal CO2 volume, preventing the wasteful recirculation of CO2 that does not contribute to the drying process.
3Reliability
If supercritical CO2 is used to remove drying fluid, then collapse of fragile structures can be prevented, but the process requires many chamber turnovers, increasing time and CO2 consumption
Solution Approach 1:
The optimized nozzle and exhaust port configuration performs preliminary action by establishing efficient fluid displacement flow patterns from the start of the process. This preliminary optimization of flow dynamics ensures that drying fluid is rapidly removed in fewer chamber turnovers, preventing substrate collapse while minimizing process time and CO2 consumption without requiring multiple repetitive cycles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design significantly reduces the time and CO2 volume required for drying fluid removal, improving manufacturing productivity by ensuring efficient and rapid removal of drying agents and residues while preventing substrate collapse.
Implementation Method 1
CO2 at supercritical conditions (Tc=31 C, Tp=1070 psi) has no surface tension to initiate collapse from capillary forces, and good solubility for several potential drying fluids
Implementation Method 2
CO2 at supercritical conditions (Tc=31 C, Tp=1070 psi) has no surface tension to initiate collapse from capillary forces, and good solubility for several potential drying fluids
Data Source
AI summary
A processing chamber for post-wet-etch removing of drying fluid (DF) is disclosed. The chamber includes a chamber wall surrounding a processing volume and a plurality of nozzles disposed annularly about the processing volume and arranged into a set of nozzle rows that includes at least one nozzle row. The chamber also includes a plenum and a set of manifolds coupled to the plurality of nozzles to deliver the supercritical CO2 to the plurality of nozzles. Each nozzle has a nozzle outlet directed toward an interior portion of the processing volume and the nozzles are configured to flow the supercritical CO2 toward the substrates in a manner that minimizes recirculation loops and vortices.