Supercritical Processing for Lithography Resist Patterns
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Solution Overview
Problem
Conventional resist materials fail to simultaneously achieve high sensitivity, pattern size controllability, and etching resistance due to limitations in introducing photosensitizers, pattern roughness, and the solubility of etching resistance improvers.
Innovation Solution
A resist pattern forming method involving supercritical processing, where a supercritical processing solution with an organic matter is used before exposure or development, allowing for the introduction of low-molecular-weight organic compounds that improve sensitivity and etching resistance while reducing pattern roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large amount of photosensitizer is introduced in the resist solution to enhance sensitivity, then sensitivity increases, but storage stability of the resist solution deteriorates
Solution Approach 1:
The patent applies preliminary action by introducing the photosensitizer immediately before exposure through supercritical fluid processing, rather than mixing it in advance in the resist solution. This timing strategy allows the photosensitizer to be present when needed for high sensitivity while avoiding premature degradation that would compromise storage stability.
2Reliability
If an etching resistance improver with many carbon atoms is used to improve etching resistance, then etching resistance increases, but solubility in resist solvent decreases
Solution Approach 1:
The patent changes the physical state parameter of the etching resistance improver by introducing it through supercritical fluid processing. This allows the use of compounds with higher carbon atom counts that would normally be insoluble in resist solvents, as the supercritical state enables penetration and incorporation without requiring traditional solubility.
3Ease of manufacture
If conventional resist materials are used to simplify the process, then ease of manufacture is maintained, but it is impossible to simultaneously achieve high sensitivity, pattern size controllability, and etching resistance
Solution Approach 1:
The patent introduces supercritical fluid processing as an intermediary technique that bridges the gap between simple conventional processes and advanced resist performance. This intermediary method enables the introduction of multiple functional components (photosensitizers, etching resistance improvers) without requiring complete process redesign, thus maintaining relative simplicity while achieving high manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of fine and high-accuracy patterns with improved sensitivity and etching resistance, addressing the limitations of conventional resist materials.
Implementation Method 1
performing supercritical processing in which a supercritical processing solution in which an organic matter is dissolved is brought into contact with the film before the exposure or development
Data Source
AI summary
A fine and high-accuracy pattern, which is also excellent in either or both of high sensitivity and etching resistance can be provided. Disclosed is a resist pattern forming method in which a single- or multi-layered film 2 is formed on a substrate 1 and a resist pattern is formed on the film 2 through a lithography technique including exposure and development, the method comprising performing supercritical processing in which the film 2 is brought into contact with a supercritical processing solution 5′ in which an organic matter 4 is dissolved before the exposure or development.