Superjunction MOSFET Corner Layout for Charge Balance

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Superjunction MOSFET devices face challenges in maintaining charge balance at corner and termination regions, leading to reduced breakdown voltage and device robustness due to difficulties in achieving uniform electric field distribution.

Innovation Solution

A two-dimensional approach is used to optimize the layout of active cell and termination column structures by adjusting the dose and distribution of dopants, incorporating curvature considerations and forming edge rings to balance charges, ensuring that the ratio of P-type to N-type doped areas maintains charge balance in corner regions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If P columns are arranged in uniform parallel rows in the central active region, then manufacturing simplicity is improved, but charge balance at corner and termination regions deteriorates

Engineering Contradiction:
ImproveP column arrangement simplicityVSAvoidcharge balance at corners
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies different P column layout configurations to different regions: uniform parallel rows in the central active region for manufacturing simplicity, and curved/adjusted patterns at corner and termination regions for charge balance. This local differentiation resolves the contradiction by optimizing each region according to its specific requirements.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The device is divided into distinct regions (central active region vs. corner/termination regions) with different P column arrangements. The central region uses simple uniform rows while corner regions use specialized curved patterns, allowing each segment to be optimized independently for its function.

Inventive Principle:
Principle #1Segmentation

2Reliability

If curved termination design is used in corner region, then breakdown voltage is improved by reducing E-field, but P column layout matching for charge balance becomes more challenging

Engineering Contradiction:
Improvebreakdown voltageVSAvoidP column layout complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs curved P column patterns at corner regions instead of straight lines. The curved geometry follows the circular field plate contours and reduces electric field concentration at sharp corners, thereby improving breakdown voltage while maintaining charge balance through careful curvature radius selection.

Inventive Principle:
Principle #14Spheroidality (Curvature)

3Reliability

If charge balance is achieved in corner regions, then breakdown voltage uniformity is improved, but device complexity increases due to optimized corner and termination region design

Engineering Contradiction:
Improvebreakdown voltage uniformityVSAvoidcorner region design complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent designs the P column layouts in corner and termination regions to achieve equipotential distribution and uniform electric field characteristics. By carefully positioning P columns to balance charges, the design ensures uniform breakdown voltage across the entire device surface, including corners and termination regions.

Inventive Principle:
Principle #12Equipotentiality

Data Source

PatentUS8975720B2Corner layout for superjunction device
Publication Date: 2015.03.10 ALPHA & OMEGA SEMICONDUCTOR INC
  • US8975720B2 patent drawing
  • US8975720B2 patent drawing
  • US8975720B2 patent drawing

AI summary

A superjunction device and methods for layout design and fabrication of a superjunction device are disclosed. A layout of active cell column structures can be configured so that a charge due to first conductivity type dopants balances out charge due to second conductivity type dopants in a doped layer in an active cell region. A layout of end portions of the active cell column structures proximate termination column structures can be configured so that a charge due to the first conductivity type dopants in the end portions and a charge due to the first conductivity type dopants in the termination column structures balances out charge due to the second conductivity type dopants in a portion of the doped layer between the termination column structures and the end portions.