Surface Activation Bonding With a Sacrificial Species Layer
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Solution Overview
Problem
Direct bonding techniques, such as SAB, face challenges with material depletion and reduced mechanical resistance at the bonding interface due to uneven ion bombardment efficiency across different chemical species, leading to a carbon-rich layer with lower mechanical resistance.
Innovation Solution
A method involving the deposition of a layer of the species of interest on the surface before activation, which is entirely consumed during the bombardment process, ensuring bonding without a third layer at the interface and minimizing material depletion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If ion or atom bombardment is used to activate surfaces for direct bonding, then adhesion energy is improved, but material depletion occurs leading to reduced mechanical resistance
Solution Approach 1:
The patent applies preliminary action by depositing a sacrificial layer of the depleted species onto the surface before bombardment. This layer is prepared in advance to compensate for the material that will be removed during the activation process, ensuring the underlying substrate material is protected from depletion.
Solution Approach 2:
The sacrificial layer acts as an intermediary between the bombardment process and the substrate material. It absorbs the harmful effects of bombardment-induced depletion, allowing the activation process to proceed while protecting the structural integrity of the substrate.
2Reliability
If ion or atom bombardment is used to remove surface oxides, then bonding activation is improved, but surface composition changes occur creating a carbon-rich layer
Solution Approach 1:
The sacrificial layer is deposited beforehand to prevent the formation of a carbon-rich depleted layer during bombardment. By having this layer in place prior to activation, the bombardment removes the sacrificial material instead of depleting the substrate, thereby preventing compositional changes.
Solution Approach 2:
The patent converts the harmful effect of bombardment-induced depletion into a beneficial process by directing the bombardment to selectively remove the sacrificial layer rather than the substrate material. The depletion effect is harnessed to remove the sacrificial layer, which in turn protects the substrate composition.
3Adaptability or versatility
If modified SAB process with additional material deposit is used, then bonding of different materials is improved, but device complexity increases
Solution Approach 1:
The sacrificial layer approach provides a universal solution that can be applied to bond various material combinations (SiC, Si, GaN, etc.) without requiring different specialized processes. The same fundamental methodology works across different material systems, reducing the need for multiple specialized bonding machines.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances bonding quality by maintaining the mechanical resistance of the materials and preventing surface composition changes, allowing for strong and reliable bonds without additional layers.
Implementation Method 1
the surface to be bonded is bombarded by a beam of ions or atoms (most often argon) to remove surface oxides
Implementation Method 2
activating the first surface by bombarding the first surface with a beam of ions or atoms so as to consume the entire layer of species deposited previously
Implementation Method 3
activating the second surface by bombarding the second surface with a beam of ions or atoms
Implementation Method 4
a step of activating the first surface by bombarding the first surface with a beam of ions or atoms so as to consume the entire layer of species deposited previously
Data Source
Figure 1~2
Figure 3~4
AI summary
One aspect of the invention relates to a method (100) of surface activation bonding by bombardment of ions or atoms from a first surface of a first substrate to a second surface of a second substrate, the material of the first substrate at the first surface comprising at least two chemical species, one of which, called the species of interest, is depleted upon activation by bombardment of ions or atoms, the method (100) comprising: - a step (1 E3) of depositing on the first surface of the first substrate a layer of the species of interest; - a step (1 E5) of activating the first surface by bombarding the first surface with a beam of ions or atoms so as to consume the entire layer of species deposited previously; - a step (1 E5') of activating the second surface by bombarding the second surface with a beam of ions or atoms;- a step (1 E6) of bringing the first surface of the first substrate into contact with the second surface of the second substrate....;