Switching Memory Cell Isolates Channel Layers to Reduce Program Disturbance
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Solution Overview
Problem
Current semiconductor devices face challenges in optimizing memory cell programming operations, particularly in minimizing program disturbance and pass disturbance, which affect the reliability and efficiency of data storage.
Innovation Solution
The semiconductor device employs a method involving memory strings with first and second channel layers and switching memory cells, where the switching memory cells are turned on to connect the channel layers for normal programming and turned off for disturbance compensation programming, applying specific voltages to manage channel boosting and reduce disturbances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the switching memory cell is turned on to connect the first channel layer and the second channel layer for normal programming, then the programming operation can be performed efficiently, but program disturbance and pass disturbance occur affecting data reliability
Solution Approach 1:
The switching memory cell dynamically changes its state between ON and OFF based on the programming operation requirements. During normal programming, the switching memory cell is turned ON to connect the first and second channel layers, enabling efficient programming. During disturbance compensation programming, it is turned OFF to isolate the channel layers and prevent program disturbance and pass disturbance, thereby resolving the contradiction between programming efficiency and data reliability.
2Productivity
If multiple memory cells are programmed simultaneously using stacked channel layers, then programming speed increases, but disturbance to other memory cells increases
Solution Approach 1:
The memory device segments the channel structure into a first channel layer and a second channel layer, separated by a switching memory cell. This segmentation allows independent control of each channel layer through the switching memory cell, enabling selective programming of memory cells in different layers without causing disturbance to other cells, thus resolving the contradiction between programming speed and program disturbance.
3Reliability
If the switching memory cell is used to isolate channel layers during disturbance compensation programming, then data reliability improves, but the device complexity increases
Solution Approach 1:
The switching memory cell serves multiple functions: it acts as a normal memory cell for data storage, functions as a switch to connect or isolate the first and second channel layers, and enables both normal programming and disturbance compensation programming operations. This multi-functionality reduces the need for additional dedicated components, thereby limiting the increase in device complexity while improving data reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and efficiency of memory cell programming by minimizing program and pass disturbances, thereby improving the overall performance and data integrity of the semiconductor device.
Implementation Method 1
turning off the switching memory cell such that the first channel layer and the second channel layer are electrically isolated from each other
Data Source
AI summary
A semiconductor device includes a memory string connected between a source line and a bit line. The memory string includes first memory cells stacked along a first channel layer, second memory cells stacked along a second channel layer, and at least one switching memory cell connected between the first memory cells and the second memory cells. A method for operating the semiconductor device includes programming a selected first memory cell among the first memory cells, selecting a second memory cell to be programmed among the second memory cells, applying a program voltage to a word line connected to the selected second memory cell, turning off the switching memory cell such that the first channel layer and the second channel layer are electrically isolated from each other, and applying a pass voltage to word lines connected to unselected memory cells among the first and second memory cells.