TDDB Test Circuit with Parallel Switching for Short-Circuit Isolation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional TDDB test structures are time-consuming and prone to short-circuits when high voltages are applied, leading to potential oxide burn and unstable results due to the inability to test multiple samples simultaneously without affecting each other.

Innovation Solution

A test circuit with multiple TDDB test units connected in parallel, each comprising a TDDB test component, a switch, and a control circuit that disconnects the broken unit to prevent short-circuits, allowing simultaneous testing at the same voltage without affecting other units.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If multiple TDDB test units are tested simultaneously at the same voltage, then test time is significantly shortened and test efficiency is improved, but short-circuits may occur when one unit breaks down, affecting other units and reducing test reliability

Engineering Contradiction:
Improvetest efficiencyVSAvoidtest reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The test circuit is divided into multiple independent test units, each with its own switch and control circuit. When one unit breaks down, only that unit is isolated while others continue testing, enabling parallel testing of multiple samples simultaneously to improve productivity without compromising overall reliability

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A switch and control circuit are introduced as intermediary components between the power source and each TDDB test component. These intermediaries detect breakdown conditions and automatically disconnect the affected unit, preventing the short-circuit from propagating to other units and ensuring continuous reliable testing of remaining units

Inventive Principle:
Principle #24Intermediary (Mediator)

2Loss of time

If high voltage is applied to reduce test time, then test time is shortened, but oxide burn occurs due to unstable mechanisms and unreasonable prediction of gate oxide lifetime

Engineering Contradiction:
Improvetest timeVSAvoidoxide burn
Core Design Contradiction:
Loss of timeVSObject-affected harmful factors

Solution Approach 1:

The control circuit continuously monitors the current through each TDDB test component and provides feedback to the switch. When the current indicates breakdown (sharp high current), the switch automatically opens to disconnect the unit, preventing further voltage application that would cause oxide burn while allowing the test to be stopped in a controlled manner

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The switch and control circuit are configured to detect breakdown conditions and automatically disconnect the test unit before severe damage occurs. This preemptive protection mechanism prevents oxide burn by stopping voltage application at the appropriate moment, cushioning against the harmful effects of excessive voltage

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS11988704B2Test circuits and semiconductor test methods
Publication Date: 2024.05.21 CHANGXIN MEMORY TECH INC
  • US11988704B2 patent drawing
  • US11988704B2 patent drawing

AI summary

The present application relates to a test circuit, comprising: M test units, each test unit having a first terminal and a second terminal, a first terminal of each test unit being connected to a power wire, a second terminal of each test unit being connected to a ground wire, M being a positive integer; each test unit comprises a TDDB test component, a switch, and a control circuit; the TDDB test component has a first equivalent resistance before being broken down, the TDDB test component has a second equivalent resistance after being broken down, and the first equivalent resistance is greater than the second equivalent resistance.