Temperature-Compensated Charge Pump for Dense Memory Circuits
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Solution Overview
Problem
Semiconductor devices face challenges in increasing integration density and reliability due to the large area occupied by charge pumps, which are not effectively designed to adapt to temperature changes.
Innovation Solution
A semiconductor device design that includes a temperature compensation circuit, voltage regulator, clock generator, and charge pump circuit with a level shifter, where the output voltage and clock signal frequencies and swing levels are adjusted based on temperature, allowing the charge pump to generate higher voltages in high-temperature environments while maintaining reliability and reducing the area occupied by the charge pump.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the charge pump is designed to output a fixed high voltage level, then the voltage generation function is reliable, but the device cannot adapt to temperature changes and occupies larger area to ensure performance across temperature ranges
Solution Approach 1:
The charge pump circuit dynamically adjusts its operating frequency based on temperature conditions. The control logic increases the pumping frequency when temperature rises to maintain adequate voltage output, and reduces frequency at lower temperatures. This dynamic adaptation eliminates the need for oversized pumping capacitors, reducing the charge pump area while maintaining reliability across temperature ranges.
Solution Approach 2:
The invention changes the operating parameters (frequency and voltage level) of the charge pump based on temperature. By monitoring temperature and adjusting the pumping frequency and output voltage accordingly, the system maintains effective voltage generation without requiring fixed high-capacity components, thus reducing overall charge pump area.
2Reliability
If the charge pump uses large pumping capacitors to ensure sufficient voltage output, then the voltage generation is reliable, but the integration density decreases due to increased area
Solution Approach 1:
The charge pump operates with dynamically adjusted frequency rather than fixed high capacity components. The control logic modulates the pumping frequency to match temperature-dependent requirements, allowing smaller pumping capacitors to achieve the same effective voltage output, thereby reducing area while maintaining reliability.
Solution Approach 2:
Instead of always operating at maximum capacity with large capacitors, the charge pump uses partial action by adjusting frequency to match actual needs. At lower temperatures, reduced frequency suffices, allowing smaller capacitors to provide adequate voltage, thus reducing area without compromising reliability.
3Area of stationary object
If the charge pump operates at high frequency to reduce capacitor size, then the area is reduced, but the device generates excessive heat and consumes more power
Solution Approach 1:
The invention changes operating parameters (frequency and voltage) based on temperature conditions. The control logic increases frequency only when temperature rises and voltage output needs boosting, rather than maintaining high frequency continuously. This selective parameter adjustment reduces overall power consumption and heat generation while still achieving area reduction through optimized capacitor sizing.
Solution Approach 2:
The charge pump incorporates temperature monitoring and feedback control. The control logic receives temperature information and adjusts pumping frequency accordingly, creating a closed-loop system that optimizes power consumption. This feedback mechanism prevents excessive power usage and heat generation by avoiding unnecessary high-frequency operation, while still enabling area reduction through efficient design.
Data Source
AI summary
A semiconductor device includes a plurality of memory cells, and a peripheral circuit configured to control the plurality of memory cells. The peripheral circuit includes a temperature compensation circuit configured to output a compensation current determined based on a temperature of the semiconductor device, a voltage regulator configured to regulate a pump voltage having a level determined based on the compensation current, a clock generator configured to generate a clock signal having a frequency determined based on the compensation current; and a charge pump circuit including a level shifter, configured to output a control signal adjusted a swing level of the control signal based on the clock signal and the pump voltage, and a plurality of unit circuits, each of the plurality of unit circuits including a plurality of pumping capacitors configured to be charged and discharged by the control signal.