Temperature-Dependent SEM Mapping for Dopant Distribution Analysis
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor technologies face challenges in accurately determining dopant concentrations and related information across semiconductor devices, particularly due to limitations in spatial resolution and scalability of existing techniques like atomic force microscopy and chemical methods.
Innovation Solution
The method involves performing scanning electron microscopy (SEM) processes on semiconductor samples at different temperatures to generate multiple SEM maps, which are then used to create dopant distribution maps, providing accurate dopant concentration information and other sample parameters such as electric field strength and defect concentrations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If atomic force microscopy or chemical methods are used to determine dopant concentrations, then measurement capability is provided, but spatial resolution and scalability are limited
Solution Approach 1:
The patent applies parameter changes by performing SEM measurements at different temperatures. The dopant concentration is determined by analyzing how the secondary electron signal changes with temperature, using the relationship between temperature-dependent carrier concentration and dopant concentration to achieve accurate measurements with improved spatial resolution
Solution Approach 2:
The patent replaces mechanical measurement methods (atomic force microscopy) with an electromagnetic-based SEM technique. By using electron beam interaction and secondary electron detection with temperature variation, the method achieves both high spatial resolution and accurate dopant concentration measurement without the mechanical contact limitations
2Productivity
If traditional methods are used for dopant analysis, then measurement is possible, but scalability and detectable concentration ranges are restricted
Solution Approach 1:
The patent achieves universality by making the SEM technique capable of measuring dopant concentrations across a broad range of values and different semiconductor materials through temperature-dependent measurements. The method can detect both lightly and heavily doped regions using the same apparatus and methodology, enhancing scalability and applicability
3Loss of time
If single-temperature SEM measurement is performed, then measurement speed is maintained, but dopant concentration accuracy is insufficient
Solution Approach 1:
The patent applies periodic action by performing SEM measurements at multiple discrete temperature points. The dopant concentration is determined by analyzing the pattern of signal changes across these periodic temperature steps, which provides accurate results while maintaining reasonable measurement throughput through systematic temperature cycling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the accuracy and scalability of dopant concentration determination, offering higher spatial resolution and broader detectable dopant concentration ranges compared to traditional methods, facilitating better semiconductor device design and testing.
Implementation Method 1
performing scanning electron microscopy (SEM) processes on semiconductor samples at different temperatures to generate multiple SEM maps
Data Source
AI summary
A method of determining sample information associated with a sample is provided. In an embodiment, when a sample has a first temperature, a first measure of electrons of the sample is determined. When the sample has a second temperature different than the first temperature, a second measure of electrons of the sample is determined. Sample information associated with the sample is determined based upon the first measure of electrons and the second measure of electrons. The sample information includes a dopant concentration of the sample, a measure of electric field strength of the sample, a defect concentration of the sample, a Fermi level of the sample and/or an indication of a space charge region of the sample.