Imprint Lithography Template Pillar Formation via Plasma Etching

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Solution Overview

Problem

Current nano-fabrication techniques, such as imprint lithography, face challenges in maintaining precise control over feature dimensions and pattern transfer during the etching process, leading to inconsistencies in pattern critical dimensions and profile control, especially when dealing with materials like fused silica and refractory metals.

Innovation Solution

The implementation of a lithographic system that uses a template with a mesa structure and a fluid dispense system to apply polymerizable material, followed by energy-induced solidification, combined with a method for controlled etching of conducting and hard mask layers using plasma etching processes, monitored by reflectance probes to maintain precise etch rates and minimize material erosion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional imprint lithography is used, then pattern transfer can be achieved, but manufacturing precision and profile control deteriorate due to material erosion and inconsistent etch rates

Engineering Contradiction:
Improvepattern critical dimensionsVSAvoidprofile control
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent changes the physical and chemical parameters of the etching process by using plasma etching with controlled chemistry, temperature, and pressure parameters. This enables precise control over etch rates and material removal characteristics, resolving the contradiction between achieving pattern transfer and maintaining profile control by adjusting etching parameters to minimize erosion while preserving critical dimensions

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent implements real-time monitoring and feedback control during the etching process using reflectance probes and other sensing mechanisms. This feedback system continuously measures etch progress and material erosion, allowing dynamic adjustment of etch parameters to maintain consistent profile control and pattern critical dimensions throughout the manufacturing process

Inventive Principle:
Principle #23Feedback

2Manufacturing precision

If etching processes are used to transfer patterns, then pattern transfer is achieved, but material erosion increases leading to loss of substance

Engineering Contradiction:
Improvepattern transferVSAvoidmaterial erosion
Core Design Contradiction:
Manufacturing precisionVSLoss of substance

Solution Approach 1:

The patent optimizes etching parameters including gas composition, pressure, power, and chemistry to achieve selective material removal. By carefully controlling these parameters, the process achieves effective pattern transfer while minimizing unwanted material erosion through precise parameter tuning that favors targeted removal over general erosion

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies local quality control by using masked regions and selective etching techniques that target specific areas for material removal. The etching process is localized to only where pattern transfer is needed, preventing erosion in non-critical areas and reducing overall material loss while maintaining manufacturing precision in the targeted regions

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If feature dimensions are reduced to 50 nm or smaller, then nano-fabrication resolution is improved, but process control becomes more difficult

Engineering Contradiction:
Improvefeature dimensionsVSAvoidprocess control
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent replaces traditional mechanical lithography systems with a template-based imprinting system combined with plasma etching. This substitution eliminates the need for direct mechanical contact at the nanoscale, reducing complexity in positioning and handling while achieving better control over feature dimensions through the template's predefined geometry and controlled material deposition

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces a template structure as an intermediary element that carries the pattern information. This template acts as a mediator between the design specifications and the final fabricated features, simplifying process control by decoupling the complexity of nanoscale patterning from the fabrication process itself and allowing standardization of the template manufacturing

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables improved process control and reduced material erosion, resulting in consistent pattern transfer and enhanced resolution in nano-fabrication, particularly for structures with features in the range of 50 nm or smaller, while maintaining the integrity of the hard mask layer.

Implementation Method 1

The formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template

Methodology Applied
Scientific EffectPhotopolymerization: Photopolymerisation

Implementation Method 2

The substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer

Methodology Applied
Scientific EffectPlasma etching: Plasma

Implementation Method 3

monitored by reflectance probes to maintain precise etch rates and minimize material erosion

Methodology Applied
Scientific EffectReflectance measurement: Reflection

Data Source

PatentUS8512585B2Template pillar formation
Publication Date: 2013.08.20 MOLECULAR IMPRINTS INC
  • US8512585B2 patent drawing
  • US8512585B2 patent drawing
  • US8512585B2 patent drawing

AI summary

Methods for forming an imprint lithography template are provided. Materials for forming the imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials.