Templating Layers for Low-Temperature Perpendicular Heusler Films
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Solution Overview
Problem
The development of magnetic materials with large perpendicular magnetic anisotropy is needed for scaling beyond the 20 nm node in spin transfer torque magnetic random access memories (STT MRAM), requiring materials that are compatible with conventional CMOS technologies and can be fabricated at lower temperatures to avoid damaging other device components.
Innovation Solution
The use of ultrathin Heusler compound films with perpendicular magnetic anisotropy, grown on templating layers like CoAl, CoGa, or CoSn, which are epitaxially matched and exhibit bulk-like magnetic properties, along with an IrAl templating layer that promotes growth without the need for high-temperature annealing, allowing for the formation of synthetic antiferromagnetic structures for improved magnetic tunnel junction performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high temperature thermal processes are used for deposition and annealing, then the atomic ordering and quality of Heusler films are improved, but other portions of the device are damaged
Solution Approach 1:
The patent introduces a templating layer as an intermediary between the substrate and the Heusler compound layer. This templating layer facilitates the formation of high-quality Heusler films with proper atomic ordering at lower deposition temperatures, thereby preventing thermal damage to other device components while still achieving the desired material quality
Solution Approach 2:
The patent changes the deposition temperature parameter from high temperature (200°C or higher) to lower temperatures by introducing the templating layer. This parameter change allows the Heusler films to maintain good atomic ordering without subjecting other device portions to damaging high temperature conditions
2Adaptability or versatility
If room temperature deposition is used, then compatibility with CMOS technologies is improved, but the atomic ordering and quality of Heusler films deteriorate
Solution Approach 1:
The templating layer acts as a mediator that enables room temperature deposition of Heusler films while maintaining their atomic ordering. The templating layer provides a structured template that guides the formation of ordered Heusler compounds even at low deposition temperatures, thus achieving both CMOS compatibility and high film quality
Solution Approach 2:
The patent performs preliminary action by depositing the templating layer before the Heusler compound layer. This preliminary templating structure prepares the substrate in advance to support the formation of ordered Heusler films at room temperature, eliminating the need for subsequent high temperature annealing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of high-quality, ultrathin Heusler films with excellent magnetic properties, including high perpendicular magnetic anisotropy and square hysteresis loops, suitable for STT-MRAM and racetrack memory applications, while maintaining compatibility with CMOS technologies and avoiding thermal damage to other device components.
Implementation Method 1
The use of ultrathin Heusler compound films with perpendicular magnetic anisotropy, grown on templating layers like CoAl, CoGa, or CoSn, which are epitaxially matched
Data Source
AI summary
A device including a templating structure and a magnetic layer is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The magnetic layer is on the templating structure and includes at least one of a Heusler compound and an L10 compound. The magnetic layer is in contact with the templating structure and being magnetic at room temperature.