Temporary Bonding Laminate for Semiconductor Wafer Processing
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Solution Overview
Problem
Existing methods for temporarily bonding semiconductor wafers to supporting substrates face challenges such as inadequate adhesiveness leading to damage during processing, excessive bond strength causing separation issues, high equipment costs for plasma deposition, lengthy heating processes breaking devices, and complex multistage processes for fill layer formation.
Innovation Solution
A temporary bonding laminate comprising a release layer with a compound that remains liquid at 25°C and has a 5% mass reduction temperature of 250°C or more, and a binder with a similar temperature, promoting solvent permeation for easy release and reduced outgassing, along with an adhesive layer containing a polymerizable monomer and photoinitiator or thermal polymerization initiator.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a plasma polymer layer is inserted as a separation layer between the wafer and carrier layer system, then the bond strength between the wafer and separation layer can be controlled to enable easy debonding, but the equipment cost and process time increase significantly
Solution Approach 1:
The patent introduces a separation layer composed of a fluorocarbon resin layer and a silicon oxide layer as an intermediary between the wafer and carrier layer system. This intermediary layer provides controlled bond strength that enables easy debonding without requiring complex plasma deposition equipment, thereby resolving the contradiction between ease of operation and device complexity.
2Length of moving object
If the wafer thickness is reduced to 200 μm or less for miniaturization, then the size of IC chips is reduced, but the wafer becomes too thin to be stably supported during processing and handling
Solution Approach 1:
The patent embeds thin wafers (200 μm or less) within a multi-layer carrier structure consisting of the carrier layer system, separation layer, and adhesive layer. This nested configuration provides mechanical support and stability to the thin wafers during processing and handling, resolving the contradiction between reduced wafer thickness and processing stability.
3Ease of manufacture
If conventional adhesives are used for temporary bonding, then the bonding process is simple, but the adhesiveness is insufficient leading to wafer damage during processing
Solution Approach 1:
The patent employs a composite adhesive system comprising a fluorocarbon resin layer combined with a silicon oxide layer. This composite material structure provides enhanced adhesiveness and mechanical strength while maintaining process simplicity, thereby resolving the contradiction between ease of manufacture and bonding strength.
4Ease of operation
If heating is applied for lengthy periods to achieve debonding, then the bond is successfully broken, but the devices on the wafer are damaged
Solution Approach 1:
The patent modifies the thermal and chemical parameters of the separation layer by using fluorocarbon resin with specific glass transition temperature and incorporating silicon oxide. These parameter changes enable debonding to occur at lower temperatures and shorter times, preserving device integrity while achieving effective separation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The laminate securely supports semiconductor wafers during mechanical or chemical processes and allows for easy release without damage, even after high-temperature treatments, while reducing outgassing and improving productivity.
Implementation Method 1
promoting solvent permeation for easy release
Implementation Method 2
adhesive layer containing a polymerizable monomer and photoinitiator or thermal polymerization initiator
Data Source
AI summary
A temporary bonding laminate for use in the manufacture of semiconductor devices and a method for manufacturing semiconductor devices are provided. A member to be processed (a semiconductor wafer or the like) can be temporarily supported securely and readily during a mechanical or chemical process of the member, and then the processed member can be readily released from the temporary support without damaging the processed member even after a high temperature process. The laminate includes: (A) a release layer and (B) an adhesive layer. The release layer contains (a1) a compound being liquid at 25° C. and having a 5% mass reduction temperature of 250° C. or more when measured in a nitrogen gas stream under heating conditions of a constant heating rate of 20° C./min; and (a2) a binder having a 5% mass reduction temperature of 250° C. or more when measured under the same conditions.