Semiconductor Termination Oxide Grooves for Moisture-Resistant Adhesion
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Solution Overview
Problem
Semiconductor devices face issues with weak adhesion between oxide films and polyimide layers, leading to moisture penetration and electric field concentration, which compromises power cycle tolerance and moisture resistance, especially under thermal stress.
Innovation Solution
Incorporating concave and convex portions on the semiconductor substrate, with the concave portions having a decreasing width and convex portions having an increasing width, to enhance adhesion and moisture resistance, and using an insulating surface protective film to cover the oxide film, thereby improving the power cycle tolerance and moisture resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a rectangular groove is provided in the termination region to improve moisture resistance, then the moisture resistance is improved, but the adhesion in the vertical direction weakens causing peeling under thermal stress
Solution Approach 1:
The patent replaces the rectangular groove shape with a curved groove shape that has rounded corners and smooth transitions. This curvature eliminates stress concentration points that cause peeling while maintaining the moisture barrier function. The curved geometry distributes thermal stress more evenly across the interface between the oxide film and polyimide layer.
Solution Approach 2:
The groove is segmented into multiple sections along the termination region, creating a series of smaller curved grooves rather than one large rectangular groove. This segmentation reduces the overall stress on any single interface while maintaining effective moisture blocking across the entire termination region.
2Reliability
If the termination region length is increased to improve moisture resistance, then the moisture resistance improves, but the chip size increases
Solution Approach 1:
The patent applies curved grooves specifically at critical locations within the termination region where moisture penetration is most likely to occur, rather than uniformly extending the termination region. This localized approach provides effective moisture protection while minimizing the overall chip size.
Solution Approach 2:
Instead of increasing the length of the termination region in one dimension, the patent introduces grooves that create additional protective pathways in a different dimensional orientation. The curved grooves provide a three-dimensional moisture barrier that blocks moisture penetration without requiring increased lateral dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases the adhesion between the surface protective film and the semiconductor substrate, reducing moisture penetration and enhancing power cycle tolerance while maintaining or reducing the chip size, thus improving the overall reliability and manufacturing efficiency of semiconductor devices.
Implementation Method 1
the anchor effect produced by the concave portion or the convex portion improves the adhesion in the vertical direction of the semiconductor device
Implementation Method 2
an oxide film is provided on the upper surface of a semiconductor substrate... the adhesion between the oxide film and the polyimide is weak
Data Source
AI summary
A semiconductor device includes a semiconductor substrate in which an effective region through which a current flows and a termination region formed so as to surround an outer peripheral side of the effective region are defined, an oxide film provided in contact with an upper surface of the termination region so as to cover the upper surface, an organic insulating film containing an insulating material and provided so as to cover a portion of the oxide film excluding the peripheral portion, and at least one of a groove concave downward and a ridge protruding upward in the portion of the oxide film covered with the organic insulating film, in which the groove has a portion in which a width thereof decreases upward, and the ridge has a portion in which the width thereof increases upward.