TFT Array Substrate with Merged Insulation Layers

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Solution Overview

Problem

The manufacturing of flat panel display devices, such as organic light emitting display devices, is complex and costly due to the need for multiple mask processes in photolithography, which increases the time and expense of producing minute patterns of thin-film transistors, capacitors, and wires on substrates.

Innovation Solution

A thin-film transistor array substrate design with a specific layer structure and manufacturing method that includes a thin-film transistor with active and insulation layers, a pixel electrode with a semi-transmission metal layer, and a capacitor with separate dielectric and protection layers, allowing for simpler and more efficient manufacturing processes by using fewer mask steps and optimizing insulation layer thickness and material selection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If multiple mask processes are used in photolithography to form minute patterns of TFT, capacitor, and wire, then the manufacturing precision is improved, but the device complexity and manufacturing cost are increased

Engineering Contradiction:
Improvepattern formation precisionVSAvoidmanufacturing process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines the formation of the capacitor dielectric layer and the TFT gate insulation layer into a single insulation layer structure. This merging of functions reduces the number of separate photolithography mask processes required, thereby simplifying the manufacturing process while maintaining the precision needed for forming minute patterns of TFTs, capacitors, and wires on the substrate

Inventive Principle:
Principle #5Merging (Combining)

2Manufacturing precision

If multiple mask processes are used in photolithography, then the manufacturing precision is improved, but the manufacturing time is increased

Engineering Contradiction:
Improvepattern formation precisionVSAvoidmanufacturing time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

By merging the capacitor dielectric and TFT gate insulation into a single layer, the patent reduces the sequential steps in the photolithography process. This consolidation decreases the total manufacturing time while preserving the ability to achieve precise pattern formation through optimized single-mask processes

Inventive Principle:
Principle #5Merging (Combining)

3Manufacturing precision

If multiple mask processes are used in photolithography, then the manufacturing precision is improved, but the manufacturing cost is increased

Engineering Contradiction:
Improvepattern formation precisionVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent merges multiple insulation layer functions into a single layer, which directly reduces the number of expensive photolithography mask processes required. This approach lowers manufacturing costs by eliminating redundant processing steps while maintaining the precision needed for modern display device fabrication

Inventive Principle:
Principle #5Merging (Combining)

4Reliability

If insulation layers are separately optimized for transistors and capacitors, then the reliability is improved, but the device complexity is increased

Engineering Contradiction:
Improvesignal transmission qualityVSAvoidlayer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

While maintaining a unified insulation layer structure, the patent enables separate optimization of different regions within the layer for transistor and capacitor functions. This segmentation approach allows tailored dielectric properties in different areas, improving signal transmission reliability without requiring entirely separate layer structures for each component type

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS8637868B2Thin-film transistor array substrate, organic light emitting display device including the same, and method of manufacturing the same
Publication Date: 2014.01.28 SAMSUNG DISPLAY CO LTD
  • US8637868B2 patent drawing
  • US8637868B2 patent drawing
  • US8637868B2 patent drawing

AI summary

A TFT array substrate including: a thin-film transistor including an active layer, gate, source and drain electrodes, a first insulation layer between the active layer and the gate electrode, and a second insulation layer between the gate and the source and drain electrodes; a pixel electrode on the first and second insulation layers, and connected to one of the source and drain electrodes; a capacitor including a first electrode on the same layer as the gate electrode, a second electrode formed of the same material as the pixel electrode, a first protection layer on the second electrode, and a second protection layer on the first protection layer; a third insulation layer between the second insulation layer and the pixel electrode, and between the first electrode and the second electrode; and a fourth insulation layer covering the source and drain electrodes and the second protection layer, and exposing the pixel electrode.