Thin Film Transistor Array Via Hole Formation Using Liquid-Repellent Ink

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Solution Overview

Problem

Existing methods for forming interlayer insulation films in thin film transistor arrays, such as those using photolithography, face challenges in productivity and cost reduction, particularly when aiming for flexible and cost-effective manufacturing processes like printing methods, and often result in defects that affect conduction between electrodes.

Innovation Solution

The method involves forming a thin film transistor array with an interlayer insulation film using a printing method, where a liquid-repellent ink is applied to the drain electrode via holes using an ink jet method, allowing for selective exclusion of the interlayer insulation film from the via hole portion, and utilizing a thiol or disulfide group to enhance liquid-repellent properties, thereby avoiding photolithography and reducing defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photolithography is used to form via holes in the interlayer insulation film, then the manufacturing precision and reliability are improved, but the productivity decreases and manufacturing cost increases

Engineering Contradiction:
Improvevia hole formation precisionVSAvoidmanufacturing productivity
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent replaces the photolithography process (which requires photo resist coating, exposure, and development steps) with a direct printing method using a printing head. This substitutes a complex photochemical system with a simpler direct deposition system, improving productivity while maintaining via hole formation precision through controlled printing parameters.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent extracts and eliminates the intermediate photo resist layer and photolithography steps from the manufacturing process. By directly printing the conductive material through the interlayer insulation film, it removes unnecessary process steps, thereby improving productivity and reducing manufacturing cost while maintaining the required via hole precision.

Inventive Principle:
Principle #2Taking out (Extraction)

2Manufacturing precision

If photolithography is used to form via holes, then the manufacturing precision is improved, but the manufacturing cost increases

Engineering Contradiction:
Improvevia hole formation precisionVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent replaces the expensive photolithography system with a more cost-effective direct printing system. This substitution eliminates the need for photo resist materials, exposure equipment, and development processes, thereby reducing manufacturing cost while maintaining via hole formation precision through controlled printing parameters.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent uses a disposable or replaceable printing head that can be easily replaced or regenerated, avoiding the high cost of photolithography equipment and materials. This approach reduces manufacturing cost while maintaining the required precision through controlled printing parameters and head replacement strategies.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Productivity

If a printing method is used to form the interlayer insulation film, then the productivity is improved and manufacturing cost is reduced, but the manufacturing precision and reliability deteriorate due to defects

Engineering Contradiction:
Improvemanufacturing productivityVSAvoidconduction reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies a liquid-repellent coating to the drain electrode surface before printing the interlayer insulation film. This preliminary action prevents the printing material from adhering to the drain electrode, ensuring that via holes are cleanly formed without defects that would compromise conduction reliability, while maintaining the productivity benefits of the printing method.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent applies different surface properties to different regions: the liquid-repellent coating is applied only to the drain electrode surface where via holes will be formed, while other regions maintain their original properties. This localized treatment ensures reliable conduction through clean via holes without affecting the overall integrity of the interlayer insulation film.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the formation of interlayer insulation films without photolithography, reducing defects and ensuring sufficient conduction between electrodes, thereby enhancing productivity and enabling the production of high-quality, flexible thin film transistors suitable for various applications, including flexible displays and electronic tags, with reduced manufacturing costs.

Implementation Method 1

a liquid-repellent ink is coated on a conductor surface exposed in the via hole portion so as to obtain liquid-repellent properties

Methodology Applied
Scientific EffectLiquid-repellent properties: Hydrophobe

Implementation Method 2

utilizing a thiol or disulfide group to enhance liquid-repellent properties

Methodology Applied
Scientific EffectThiol or disulfide group interaction: Chemical Bonding

Data Source

PatentUS10243157B2Thin film transistor array and image display device
Publication Date: 2019.03.26 TOPPAN HOLDINGS INC
  • US10243157B2 patent drawing
  • US10243157B2 patent drawing
  • US10243157B2 patent drawing

AI summary

A thin film transistor array includes a substrate, a gate electrode formed on the substrate, a gate insulation film covering the gate electrode, a source electrode formed on the gate insulation film, a drain electrode formed on the gate insulation film, a semiconductor layer connected to the source electrode and the drain electrode, an interlayer insulation film formed on the drain electrode and the semiconductor layer, and a pixel electrode formed on the interlayer insulation film. The interlayer insulation film has a via hole that reaches a portion of the drain electrode, and the drain electrode has a liquid repellent coating on the portion positioned in the via hole.