Thin Film Transistor Manufacturing Using Back Exposure Etch-Stopper
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Solution Overview
Problem
Oxide semiconductor layers in thin film transistors are prone to damage during the manufacturing process, particularly when forming input and output electrodes, leading to decreased transistor performance and increased manufacturing costs due to the need for etch-stoppers.
Innovation Solution
A method of manufacturing thin film transistors that uses back exposure with a photo resist pattern to form etch-stoppers and active patterns without additional masks, protecting the oxide semiconductor layer and simplifying the process, thereby improving reliability and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an etch-stopper is formed to minimize damage of the oxide semiconductor, then the damage of oxide semiconductor is reduced, but the manufacturing cost increases
Solution Approach 1:
A buffer layer is introduced as an intermediary between the oxide semiconductor layer and the source/drain electrodes. This buffer layer serves as a protective barrier that prevents damage to the oxide semiconductor during electrode formation processes, eliminating the need for additional etch-stoppers and reducing manufacturing costs while maintaining reliability
2Reliability
If oxide semiconductor is used as semiconductor layer, then electron mobility is improved, but the oxide semiconductor is easily damaged during manufacturing process
Solution Approach 1:
The buffer layer is formed beforehand on the oxide semiconductor layer before the source and drain electrodes are deposited. This cushioning layer protects the oxide semiconductor from damage during subsequent manufacturing steps, allowing the high electron mobility benefits of oxide semiconductor to be realized without the vulnerability to process damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the electrical properties of thin film transistors by minimizing damage to the oxide semiconductor layer and reducing manufacturing costs, while maintaining high aperture ratios and preventing signal distortion.
Implementation Method 1
irradiating a second surface of the base substrate with light, the light passing through the base substrate and into the photo resist layer to form a first photo resist pattern
Data Source
AI summary
In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.