TFT Base Plate Barrier Layer for Water and Oxygen Protection
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Solution Overview
Problem
Active layers in both liquid crystal and organic light-emitting diode panels are susceptible to degradation due to external factors like hydrogen, water, and oxygen, leading to electrical deviations and reduced reliability.
Innovation Solution
A base plate design incorporating a substrate with thin film transistors, a barrier layer that covers the active and gate electrodes to block water and oxygen, and a flat layer to flatten the structure, reducing the risk of external contamination and complex topography effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the active layer is exposed to the outside environment, then the manufacturing process is simpler, but hydrogen, water, and oxygen can invade the active layer causing electrical deviation and reducing reliability
Solution Approach 1:
A barrier layer is introduced to cover the active layer and gate electrode, forming a protective shell that blocks water and oxygen from invading the active layer. This thin film structure prevents harmful substance penetration while maintaining the overall device architecture, thereby improving thin film transistor reliability without excessive complexity increase.
Solution Approach 2:
The barrier layer is positioned within the base plate structure, nested between the active layer and the external environment. This nested configuration allows the barrier layer to protect the sensitive active layer components while being integrated into the existing device architecture, balancing protection needs with structural complexity.
2Reliability
If a barrier layer is added to cover the active layer and gate electrode, then protection against water and oxygen is improved, but the device structure becomes more complex
Solution Approach 1:
The barrier layer is selectively positioned to cover only the active layer and gate electrode areas that require protection against water and oxygen. This localized protection approach provides targeted shielding for sensitive components without unnecessarily complicating the entire base plate structure, maintaining a balance between protection effectiveness and structural simplicity.
3Reliability
If the active layer and gate electrode are arranged in different layers with overlap, then the barrier layer coverage is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The active layer and gate electrode are arranged in different layers with vertical stacking and horizontal overlap, creating a three-dimensional protective configuration. This dimensional arrangement allows the barrier layer to cover both components effectively by wrapping around the stacked structure, improving coverage while distributing the alignment requirements across multiple dimensions rather than requiring perfect two-dimensional alignment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents hydrogen, water, and oxygen intrusion, enhancing the reliability and luminous efficiency of the panels by protecting the thin film transistors and improving the panel's performance against environmental factors.
Implementation Method 1
a barrier layer, wherein the barrier layer at least covers the active layer and the gate electrode, and the barrier layer is used to block water and oxygen
Data Source
AI summary
An embodiment of the present application describes a base plate and a display panel, where a thin film transistor has a gate electrode, an active layer, and a source-drain metal layer. The active layer is arranged in a different layer from the gate electrode, and the active layer is disposed to overlap the gate electrode. The barrier layer at least covers the active layer and the gate electrode, and the barrier layer is used to block water and oxygen. The flat layer covers the barrier layer; and the source-drain metal layer is arranged on the flat layer. The source-drain metal layer has a source electrode and a drain electrode, and the source electrode and the drain electrode are respectively connected to the active layer.