TFT Channel Extension for Aperture Ratio and Charging Current

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Solution Overview

Problem

Conventional thin film transistor liquid crystal display (TFT-LCD) technologies face challenges in achieving sufficient charging current, leading to display failures such as bright spots and gray level non-uniformity, while attempts to increase charging current through channel width-to-length ratio modifications often result in decreased aperture ratio and display quality.

Innovation Solution

The solution involves extending the channel region of the thin film transistor by forming source and drain extension regions, which are connected to the respective electrodes, to increase the width-to-length ratio without reducing the aperture ratio, thereby enhancing the charging current and preventing display failures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If the channel width-to-length ratio is increased by modifying the channel structure, then the charging current is improved, but the aperture ratio decreases

Engineering Contradiction:
Improvecharging currentVSAvoidaperture ratio
Core Design Contradiction:
PowerVSArea of stationary object

Solution Approach 1:

The channel is divided into two separate channels, each with its own source and drain electrodes. This segmentation allows the effective channel width to be doubled while maintaining the same physical footprint, thereby increasing charging current without reducing aperture ratio

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dual-channel structure utilizes spatial arrangement in the planar dimension to achieve increased effective width. By positioning two channels side-by-side sharing common source and drain regions, the design effectively doubles the charge transport capacity without extending the pixel area

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Power

If multiple source and drain electrodes are used to increase channel width, then the charging current is improved, but the device complexity increases

Engineering Contradiction:
Improvecharging currentVSAvoidnumber of electrodes
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

Two separate channel structures share common source and drain electrode regions. This merging approach allows the effective channel width to be doubled while reusing the same electrode structures, thereby increasing charging current without proportionally increasing the number of electrodes or manufacturing complexity

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach efficiently increases the charging current of the TFT pixel region, avoiding display issues like bright spots and gray level non-uniformity while maintaining the aperture ratio, thus improving display quality.

Implementation Method 1

When the gate electrode 1 is at a voltage of high level, induced charges are generated in the semiconductor layer (e.g., an amorphous silicon (a-Si) layer) 3 of the TFT

Methodology Applied
Scientific EffectElectric Field: Electric Field

Implementation Method 2

induced charges are generated in the semiconductor layer

Methodology Applied
Scientific EffectElectrical Induction: Electrostatic Induction

Data Source

PatentUS8377758B2Thin film transistor, array substrate and method for manufacturing the same
Publication Date: 2013.02.19 BOE TECHNOLOGY GROUP CO LTD
  • US8377758B2 patent drawing
  • US8377758B2 patent drawing
  • US8377758B2 patent drawing

AI summary

A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source electrode, a drain electrode, and a channel region between the source electrode and drain electrode. A source extension region is connected with the source electrode, a drain extension region is connected with the drain electrode, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.