Thin Film Transistor Channel Length Optimization for Display Leakage
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Solution Overview
Problem
In existing display products, reducing the driving frequency leads to a decrease in pixel electrode voltage due to leakage current, causing image flicker and affecting the display effect.
Innovation Solution
The effective length of the channel region of the thin film transistor is increased to at least one third of the pixel unit along the scanning line, enhancing the transistor's resistance and reducing leakage current, thereby stabilizing the pixel electrode voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the driving frequency is reduced to lower power consumption, then power consumption decreases, but pixel electrode voltage decreases due to leakage current causing image flicker
Solution Approach 1:
The patent changes the geometric parameter of the thin film transistor by increasing the effective channel length to at least one third of the pixel unit length along the scanning line direction. This parameter change increases the transistor's resistance, thereby reducing leakage current and stabilizing pixel electrode voltage during the holding stage at low driving frequencies
Solution Approach 2:
The patent applies different channel length requirements to different regions of the display panel. Specifically, the thin film transistor's channel length is optimized locally within each pixel unit to achieve the desired resistance characteristics, while other regions of the pixel unit can have different structural characteristics
2Reliability
If the channel region length is increased to reduce leakage current, then leakage current decreases and voltage stability improves, but the transistor occupies more space in the pixel unit
Solution Approach 1:
The patent optimizes the channel length along the scanning line direction (one dimension) rather than increasing area in two dimensions. By setting the channel length to at least one third of the pixel unit length along the scanning line, the solution achieves leakage current reduction through dimensional optimization rather than area expansion
Data Source
AI summary
An array substrate, a display panel, and a display device are provided. The array substrate includes a substrate, and a plurality of scanning lines and a plurality of data lines disposed on the substrate. The plurality of scanning lines and the plurality of data lines are insulated and intersected to define a plurality of pixel units. Each pixel unit includes a thin film transistor and a pixel electrode. A gate electrode of the thin film transistor is electrically connected to a scanning line, a source electrode of the thin film transistor is electrically connected to a data line, and a drain electrode of the thin film transistor is electrically connected to the pixel electrode. An effective length of a channel region of the thin film transistor is longer than or equal to one third of a length of the pixel unit along an extension direction of the scanning line.