TFT Electrode Segmentation for Channel Defect Repair
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Solution Overview
Problem
Channel defects in liquid crystal display devices due to foreign materials or residuals lead to degraded display performance, and existing repair methods often damage the electrode structure, affecting electrical properties and display quality.
Innovation Solution
A thin film transistor design with a first and second electrode in the same layer, insulated from each other, and a third electrode with an opening part that overlaps with the conducting parts, allowing for targeted cutting to repair channel defects without affecting the third electrode, thereby maintaining electrical properties and improving display performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing repair methods are used to repair channel defects, then channel defects can be repaired, but the electrode structure is damaged and electrical properties are affected
Solution Approach 1:
The third electrode is segmented with an opening part that divides it into two separate regions. This segmentation allows the first and second electrodes to be repaired independently through the opening without affecting the continuity and integrity of the third electrode structure, thus resolving the contradiction between repairing channel defects and maintaining electrode structure integrity
Solution Approach 2:
The opening part is extracted from the third electrode structure, creating a localized repair zone. This extracted region allows access to the first and second electrodes for cutting and repair operations while isolating the repair process from the rest of the third electrode, preventing damage propagation and maintaining overall electrode integrity
2Reliability
If the third electrode is made continuous to improve electrical conductivity, then electrical properties are improved, but repair access is limited and channel defects cannot be repaired
Solution Approach 1:
The third electrode is divided into two separate segments by the opening part, creating a localized access region. This segmentation strategy maintains electrical conductivity through the gate line while providing a specific repair zone where the first and second electrodes can be accessed and repaired without compromising the overall continuity of the third electrode structure
Solution Approach 2:
The opening part creates a localized region with different structural properties compared to the rest of the third electrode. This local modification provides repair access exactly where needed (at the position of the first and second electrodes) while maintaining the continuous structure and electrical conductivity of the third electrode in all other regions
Data Source
AI summary
A thin film transistor is disclosed, comprising a first, second and third electrode. The first and second electrodes are arranged in a same layer and insulated from each other. The third electrode is arranged below and insulated from the first and second electrodes. The first electrode comprises at least one first conducting part. The second electrode comprises second conducting parts, each of which is arranged adjacent with each first conducting part. The third electrode is provided with an opening part at least partially overlapping with the first or second conducting part. If the first or second conducting part is subject to a channel defect due to short circuit, the first or second conducting part is cut off at an overlapping position with the opening part, to repair the channel defect without affecting the third electrode. A GOA circuit, a display substrate and a display device are further disclosed.