Thin Film Transistor Substrate with Fluoropolymer Wall
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Solution Overview
Problem
Existing thin film transistor (TFT) substrates using organic semiconductors face challenges in planarization and maintaining water and oil repellency when treated with CF4 plasma, leading to non-uniform organic semiconductor formation and reduced functionality.
Innovation Solution
A TFT substrate is designed with a fluoropolymer wall encompassing the channel area between source and drain electrodes, using materials like PTFE, FEP, or PVDF, which provides both water and oil repellency, allowing for uniform deposition of the organic semiconductor layer via the ink-jet method and preventing light interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If CF4 plasma treatment is applied to the wall, then water and oil repellency is improved, but planarization of the organic semiconductor layer deteriorates
Solution Approach 1:
The patent extracts the plasma treatment step entirely from the manufacturing process. Instead of applying CF4 plasma treatment to the fluoropolymer wall, the invention uses the fluoropolymer's inherent water and oil repellency properties without any plasma modification, thereby avoiding the planarization problems caused by plasma treatment while maintaining repellency functionality.
Solution Approach 2:
Rather than treating the wall with plasma to achieve repellency (conventional approach), the invention inverts the approach by selecting a fluoropolymer material that possesses inherent repellency properties without requiring plasma treatment. This reversal eliminates the harmful side effect of plasma-induced non-planarity.
2Stability of the object's composition
If CF4 plasma treatment is applied to the wall, then water and oil repellency is maintained, but uniformity of organic semiconductor formation deteriorates
Solution Approach 1:
The patent removes the plasma treatment step from the process sequence. The fluoropolymer wall is used in its as-received state, leveraging its natural repellency without any surface modification. This extraction of the problematic plasma step ensures uniform organic semiconductor formation while maintaining composition stability.
3Ease of manufacture
If plastic substrate is used, then manufacturing cost is reduced and flexibility is improved, but heat resistance deteriorates
Solution Approach 1:
The patent changes the temperature parameter of the semiconductor formation process by using organic semiconductors that can be deposited at room temperature or low temperatures via ink-jet methods. This parameter change enables the use of plastic substrates with low heat resistance while still achieving functional semiconductor layers, thus maintaining both cost-effectiveness and flexibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The fluoropolymer wall ensures planarization and maintains repellency properties, enhancing the uniformity and functionality of the organic semiconductor layer, reducing manufacturing costs and enabling flexible, heat-resistant substrates for LCDs and other display devices.
Implementation Method 1
The surface of the wall is made water and oil repellant by being treated... The wall... formed of fluoropolymer... provides both water and oil repellency
Data Source
AI summary
The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.