TFT Gate Electrode Line Width Adjustment for LCD Uniformity
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Solution Overview
Problem
Conventional TFT liquid crystal display devices experience non-uniform image quality due to irregularities in the line resistance of gate electrode lines, which are exacerbated by large screen sizes and film thickness irregularities, leading to regions with poor image quality and decreased luminance.
Innovation Solution
The TFT liquid crystal display device employs a substrate with gate electrode lines where the film thickness and width are adjusted in different regions to maintain equal cross-sectional areas, reducing line resistance irregularities and achieving uniform image quality without increasing film thickness or line width across the entire substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the width of gate electrode lines is increased to reduce line resistance irregularities, then the uniformity of image quality is improved, but the numerical aperture is decreased and luminance is lowered
Solution Approach 1:
The patent applies local quality by making the gate electrode line width vary in different regions of the substrate. Specifically, the line width is increased in regions where film thickness is decreased and reduced in regions where film thickness is increased, thereby locally compensating for thickness irregularities to achieve uniform line resistance and image quality without uniformly increasing the line width across the entire substrate.
2Manufacturing precision
If the film thickness of conductive film is increased to reduce line resistance irregularities, then the uniformity of image quality is improved, but the film forming time and manufacturing cost are increased
Solution Approach 1:
The patent applies local quality by adjusting the line width locally in different regions rather than uniformly increasing film thickness. The line width is made larger in regions with decreased film thickness and smaller in regions with increased film thickness, thereby achieving uniform line resistance and image quality without the need to increase film thickness across the entire substrate, thus reducing film forming time and material consumption.
3Manufacturing precision
If the width of gate electrode lines is increased to compensate for film thickness irregularities, then the line resistance uniformity is improved, but the area for light transmission is decreased
Solution Approach 1:
The patent applies local quality by varying the gate electrode line width locally across different regions of the substrate. The line width is increased only in specific regions where film thickness is decreased and reduced in regions where film thickness is increased, thereby achieving uniform line resistance while minimizing the overall impact on the numerical aperture and light transmission area.
Data Source
AI summary
The present invention provides a technique which can make an image quality on a screen of a TFT liquid crystal display device uniform. A liquid crystal display device includes a TFT substrate on which TFT circuits are arranged in an array, a counter substrate which is arranged to face a surface of the TFT substrate on which the TFTs are formed, and a liquid crystal material which is filled between the TFT substrate and the counter substrate, wherein in the TFT substrate, assuming a film thickness and a width of a conductive film of the gate electrode lines in a first region thereof as GLD1 and GLW1 respectively, and a film thickness and a width of a conductive film of the gate electrode lines in a second region thereof which differs from the first region as GLD2 and GLW2 respectively, when the relationship GLD1<GLD2 is established, the relationship GLW1>GLW2 is established.