Thin Film Transistor Hydrogen Diffusion Barrier Design
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Solution Overview
Problem
In oxide thin film transistors, hydrogen diffusion from source and drain areas to the channel area leads to degradation and makes it difficult to achieve a short channel structure, which limits the reliability and performance of the transistor.
Innovation Solution
A thin film transistor design where an insulating film is formed between the semiconductor channel and the source and drain conductor portions, acting as a hydrogen diffusion prevention film, and the conductor portions are formed with lower resistance materials to facilitate a short channel structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the channel area is made short to improve switching performance, then switching performance is improved, but hydrogen diffusion from source and drain areas to the channel area causes degradation
Solution Approach 1:
An insulating film is introduced as an intermediary layer between the source/drain conductor portions and the semiconductor channel. This mediator prevents hydrogen diffusion from the source and drain areas to the channel area, allowing short channel design for improved switching performance while maintaining reliability by blocking the harmful hydrogen diffusion path.
2Reliability
If a diffusion area is formed between source/drain and channel, then carrier concentration is increased, but the diffusion area intensifies degradation and limits short channel formation
Solution Approach 1:
The insulating film serves as a mediator that completely prevents hydrogen diffusion, eliminating the formation of a diffusion area. This allows precise control of the channel length without the complexity of managing diffusion boundaries, enabling true short channel design while maintaining appropriate carrier concentrations in the source and drain regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively prevents hydrogen diffusion, reduces conductorized resistance, and enhances the reliability and ease of forming a short channel, thereby improving the transistor's performance and stability.
Implementation Method 1
a first portion of the first insulating film is formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film is formed between the semiconductor and the second conductor portion
Data Source
AI summary
A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.