TFT Light-Shielding Layer Voltage Stabilization
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Solution Overview
Problem
The existing TFT devices are prone to a floating gate effect due to the influence of voltages from charged structural layers, leading to unstable operation and increased manufacturing costs, as they require forming holes in the light-shielding and buffer layers and connecting conductive lines, which adds complexity and expense.
Innovation Solution
A TFT device configuration with a light-shielding layer, a buffer layer, and an active layer where one end of the active layer is attached to the buffer and light-shielding layers, and a conductive treatment is applied to generate a stable voltage, preventing the floating gate effect and eliminating the need for additional masks and exposure processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If holes are formed in the light-shielding layer and buffer layer with conductive lines to shield voltage, then the floating gate effect is prevented, but additional mask, exposure and etching processes are added increasing manufacturing cost
Solution Approach 1:
The patent combines the light-shielding function with the active layer formation process itself. The doped metal oxide semiconductor regions are formed simultaneously with the active layer using the same sputtering and doping processes, eliminating the need for separate hole formation and conductive line deposition steps.
Solution Approach 2:
The active layer serves multiple functions: it provides the transistor switching function through the channel region, and simultaneously provides light-shielding through the doped source and drain regions. This multi-functionality eliminates the need for separate light-shielding structures and associated manufacturing processes.
Data Source
AI summary
A TFT device and a manufacturing method of the same, a TFT array substrate and a display device is provided by this disclosure. A light-shielding layer is configured under the active layer, and one of the source doping member and the drain doping member is attached to the buffer layer and the light-shielding layer to generate a stable voltage on the light-shielding layer. At the same time, forming holes in the light-shielding layer and the buffer layer is avoided and connecting a source electrode, the active layer and the light-shielding layer with conductive lines is no more needed, which decreases one mask, and corresponding exposure and etching process, thus decreases manufacturing cost of the TFT.