Thin Film Transistor Semiconductor Stack for Display Driver Fabrication
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Solution Overview
Problem
Existing display technologies face challenges in manufacturing thin film transistors with different characteristics, such as high on/off current ratio and carrier mobility, as these characteristics are often trade-offs, making it difficult to satisfy both in a single transistor structure, leading to complex and costly processes for forming various transistors in one display panel.
Innovation Solution
A method to form multiple thin film transistors with different characteristics using a single manufacturing process and apparatus, where transistors in the gate driver and data driver have distinct semiconductor structures, including polysilicon and amorphous silicon layers, with specific thickness and layer configurations to achieve desired properties without compromising other characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thin film transistors with different structures are manufactured through different processes and different apparatuses to achieve different characteristics, then the required characteristics (high on/off current ratio and high carrier mobility) can be satisfied, but the manufacturing process becomes complicated and the cost and time required are remarkably increased
Solution Approach 1:
The patent applies universality by using a single manufacturing process and apparatus to form multiple types of thin film transistors (switching transistors and driving transistors) with different characteristics. The same semiconductor layers and processing steps are used for both transistor types, eliminating the need for separate manufacturing lines while achieving the required high on/off current ratio and high carrier mobility through uniform material deposition and processing conditions.
2Reliability
If thin film transistors with different structures are manufactured through different processes and different apparatuses to achieve different characteristics, then the required characteristics (high on/off current ratio and high carrier mobility) can be satisfied, but the time required is remarkably increased
Solution Approach 1:
The patent merges the manufacturing processes for switching transistors and driving transistors into a single integrated process. Both transistor types are formed simultaneously using the same semiconductor layers, deposition steps, and processing apparatus, thereby significantly reducing the total manufacturing time while maintaining the distinct electrical characteristics required for each transistor type.
3Ease of manufacture
If a single manufacturing process is used to form thin film transistors with different characteristics, then the manufacturing complexity and cost are reduced, but it is difficult to simultaneously satisfy high on/off current ratio and high carrier mobility requirements
Solution Approach 1:
The patent applies local quality by using the same manufacturing process to create different transistor characteristics through local structural variations. The switching transistor and driving transistor are formed with different gate electrode configurations and semiconductor layer arrangements, allowing each transistor type to exhibit optimized performance (high on/off current ratio for switching, high carrier mobility for driving) while being manufactured through identical process steps and apparatus.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the simultaneous production of thin film transistors with different characteristics on a single substrate, improving carrier mobility, reducing manufacturing complexity and cost, and maintaining sufficient storage capacitance and process margin.
Implementation Method 1
a first semiconductor disposed on the control electrode and including polysilicon, a second semiconductor disposed on the first semiconductor and including amorphous silicon
Data Source
AI summary
A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a first input electrode and a first output electrode opposite to each other on the first semiconductor; and a second thin film transistor including a second control electrode, a second semiconductor disposed on the second control electrode, and a second input electrode and a second output electrode opposite to each other on the second semiconductor, wherein the first semiconductor includes a first lower semiconductor including polysilicon, and a first upper semiconductor disposed on the first lower semiconductor, the first upper semiconductor including amorphous silicon.