Thin Film Transistor Substrate Diffusion Barriers
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Solution Overview
Problem
In liquid crystal display apparatuses, the diffusion of metal atoms between metal layers during the etching process leads to incomplete etching of metal layers, resulting in deteriorated electrical properties of thin film transistors.
Innovation Solution
The implementation of a thin film transistor substrate with diffusion barriers, such as molybdenum oxide or aluminum nitride, between metal layers to prevent metal atom diffusion, ensuring complete etching and improved electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple metal layers with different metals are used in the signal line pattern, then the electrical properties and signal transmission are improved, but metal atoms diffuse between adjacent metal layers during etching process, forming metal diffused areas that deteriorate the electrical properties of thin film transistors
Solution Approach 1:
A diffusion barrier layer is introduced as an intermediary between adjacent metal layers to prevent metal atom diffusion. The diffusion barrier layer is positioned between the first metal layer and the second metal layer, acting as a mediator that blocks the harmful diffusion process while allowing the electrical signal transmission through the metal layers to continue functioning properly.
Solution Approach 2:
The patent employs composite material structure by combining multiple metal layers with different metals (such as Mo and Al) in the signal line pattern, along with diffusion barrier layers made of materials like MoOx, MoNx, AlOx, or AlNx. This composite structure leverages the advantageous electrical properties of different metals while using the diffusion barrier materials to prevent their intermixing, thus maintaining both electrical performance and structural integrity.
2Manufacturing precision
If metal layers are etched to form patterns, then the signal line structure is created, but incomplete etching occurs due to metal diffusion, leaving remaining portions that deteriorate electrical properties
Solution Approach 1:
The diffusion barrier layer serves as a mediator that enables complete etching by preventing metal atoms from diffusing into adjacent metal layers during the etching process. This ensures that the etching process can fully remove the intended metal portions without being compromised by diffusion, achieving both manufacturing precision and device reliability.
Solution Approach 2:
The diffusion barrier layer is deposited on the first metal layer before the etching process begins, performing a preliminary protective action. This pre-established barrier prevents metal diffusion during subsequent etching operations, ensuring that the etching can proceed completely without leaving harmful residual metal portions that would deteriorate electrical properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the electrical properties and reliability of the thin film transistors, leading to improved performance and durability of the display panel.
Implementation Method 1
The source electrode includes a first source layer, a second source layer disposed on the first source layer and a first diffusion barrier disposed between the first source layer and second source layer
Data Source
AI summary
A thin film transistor substrate includes a base substrate and a thin film transistor. The base substrate includes a gate line and a data line. The thin film transistor is connected to the gate line and the data line. The thin film transistor includes a gate electrode, a semiconductor pattern and source, drain electrodes. The gate electrode is disposed on the base substrate. The semiconductor pattern overlaps with the gate electrode. The source, drain electrodes is spaced apart from each other. The source electrode includes a first source layer, a second source layer disposed on the first source layer and a first diffusion barrier disposed between the first source layer and second source layer. The drain electrode includes a first drain layer, a second drain layer disposed on the first drain layer and a second diffusion barrier disposed between the first drain layer and second drain layer.