TFT Substrate with Dual Gate Insulator Thickness for High Pressure and Low Voltage Driving
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Solution Overview
Problem
Existing thin film transistor substrates for liquid crystal display devices face challenges in achieving high pressure resistance and low voltage driving while maintaining a simple production process, as they require complex structures and additional marker formation steps, which increase production time and costs.
Innovation Solution
A thin film transistor substrate with a GOLD structure LDD region and a simple production process, featuring a bottom gate electrode, thick gate insulating film, island-shaped semiconductor films, and a top gate electrode, allowing for high pressure resistance and low voltage driving without the need for an extra marker formation step, achieved through laser irradiation and impurity injection techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thick gate insulating film is used to ensure high pressure resistance in the display section, then pressure resistance is improved, but power consumption increases due to the need for high voltage driving
Solution Approach 1:
The patent applies different gate insulating film thicknesses to different functional regions: a first gate insulating film with thickness of 80-150 nm for high pressure resistance in display section, and a second gate insulating film with thickness of 30-70 nm for low voltage driving in logic circuit section. This local differentiation allows each region to operate with optimal characteristics without compromising the other.
2Manufacturing precision
If additional marker formation steps are added to achieve simultaneous formation of high pressure resistance and low voltage transistors, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The patent uses a single marker that serves multiple functions: it defines the boundary between high pressure resistance and low voltage transistor regions, and acts as a common reference for forming both types of transistors. This multi-functional marker eliminates the need for separate markers for different transistor types, reducing production steps while maintaining precision.
3Reliability
If complex structures are used to achieve both high pressure resistance and low voltage driving capabilities, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent divides the gate insulating film structure into two distinct segments: a first gate insulating film for high pressure resistance transistors and a second gate insulating film for low voltage transistors. This segmentation allows each transistor type to have optimized structure without requiring a completely new design, balancing complexity and performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the simultaneous formation of high pressure resistance and low voltage transistors with reduced leak current and power consumption, improving the efficiency and cost-effectiveness of the manufacturing process.
Implementation Method 1
irradiation of laser beam
Implementation Method 2
polycrystallizing the amorphous semiconductor film by irradiation of laser beam
Implementation Method 3
impurity injection techniques
Data Source
AI summary
A thin film transistor substrate is provided whose structure allows for the formation of (i) a thick gate insulating film, (ii) a high pressure resistance TFT having a LDD region of a GOLD structure, and (iii) a low voltage TFT having a thin gate insulating film, with less number of production steps.