TFT Substrate Metal Layer Structure for Scanning Antenna Reliability

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Solution Overview

Problem

Scanning antennas with liquid crystal capacitance experience deteriorated antenna characteristics due to metal dissolution from the source metal layer into the liquid crystal layer, leading to a decrease in voltage holding rate and antenna performance.

Innovation Solution

A manufacturing method for a TFT substrate involving specific etching processes and resist layer configurations to form source and drain metal layers with Ti, Ta, or W as lower layers and Cu or Al as upper layers, ensuring the edge of the lower metal layer does not enter inside the edge of the upper metal layer, thereby preventing metal ion dissolution into the liquid crystal layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a simple single-layer metal structure is used for source and drain electrodes, then manufacturing complexity is reduced, but metal ions dissolve into the liquid crystal layer causing antenna characteristic deterioration

Engineering Contradiction:
Improvemetal layer structureVSAvoidantenna characteristics
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent applies composite material structure by forming a multi-layer metal configuration consisting of a first metal layer (Ti, Ta, or W) and a second metal layer (Cu or Al). This composite structure prevents metal ion dissolution into the liquid crystal layer while maintaining manufacturing feasibility through sequential deposition processes.

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If the lower metal layer edge extends inside the upper metal layer edge, then manufacturing precision is simplified, but metal dissolution occurs leading to voltage holding rate decrease

Engineering Contradiction:
Improvemetal layer alignmentVSAvoidvoltage holding rate
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent implements preliminary action by designing the metal layer structure in advance such that the first metal layer (Ti, Ta, or W) extends beyond the second metal layer (Cu or Al) at the edges. This preliminary configuration ensures complete coverage of the lower metal layer by the interlayer insulating layer, preventing metal ion dissolution before it can affect the liquid crystal layer and maintain voltage holding rate.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively suppresses metal ion dissolution and maintains antenna characteristics by ensuring the source metal layer is completely covered by the interlayer insulating layer, thus maintaining the voltage holding rate and antenna performance.

Implementation Method 1

each of a source electrode and the drain electrode including a lower source metal layer including at least one element selected from the group consisting of Ti, Ta, and W, and an upper source metal layer formed on the lower source metal layer and including Cu or Al

Methodology Applied
Scientific EffectPhysical barrier:

Implementation Method 2

forming the upper source metal layer by etching the upper conductive film with the first resist layer as an etching mask

Methodology Applied
Scientific EffectEtching:

Implementation Method 3

forming a source contact portion connecting the semiconductor layer and the source electrode, and a drain contact portion connecting the semiconductor layer and the drain electrode by etching the contact layer by dry etching with the second resist layer as an etching mask

Methodology Applied
Scientific EffectDry etching:

Data Source

PatentUS11387260B2TFT substrate, scanning antenna provided with TFT substrate, and manufacturing method of TFT substrate
Publication Date: 2022.07.12 SHARP KK
  • US11387260B2 patent drawing
  • US11387260B2 patent drawing
  • US11387260B2 patent drawing

AI summary

A manufacturing method of a TFT substrate is a manufacturing method of a TFT substrate in which each of a source electrode and a drain electrode includes a lower source metal layer and an upper source metal layer. The manufacturing method of the TFT substrate includes the steps of: forming an upper source metal layer by etching an upper conductive film with the first resist layer as an etching mask; forming a lower source metal layer by etching a lower conductive film; removing the first resist layer and forming a second resist layer covering the upper source metal layer; and forming a source contact portion and a drain contact portion by etching a contact layer by dry etching with the second resist layer as an etching mask.