Thin Film Transistor Substrate Static Protection

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Solution Overview

Problem

The existing manufacturing process of thin film transistor substrates is prone to static electricity-induced damage, leading to short defects in the gate connection pattern due to the discharge of static electricity onto the GIP circuit, which damages the gate insulating film and causes electrical connections between the gate and source/drain patterns.

Innovation Solution

A thin film transistor substrate design featuring a first electrode with an extended edge beyond the second electrode, an insulating film between the electrodes, and a barrier pattern or static induction pattern to prevent static electricity discharge, ensuring the insulating film remains intact and preventing short connections between the electrodes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the gate connection pattern is formed with a relatively large area at the end of the gate line adjacent to the GIP circuit, then the gate signal can be effectively supplied to the gate line, but the gate insulating film may be damaged by static electricity discharge, causing short defects

Engineering Contradiction:
Improvegate signal transmissionVSAvoidstatic electricity damage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A barrier pattern is introduced as an intermediary element between the gate connection pattern and the gate electrode. This barrier pattern acts as a mediator that intercepts static electricity discharge before it can reach and damage the gate insulating film, while still allowing the gate signal to be transmitted effectively through the gate connection pattern to the gate line.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The barrier pattern is formed in advance during the manufacturing process, before the gate insulating film is deposited. This preliminary action ensures that the protective barrier is already in place to prevent static electricity damage to the gate insulating film during subsequent manufacturing steps or device operation.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If the gate insulating film is damaged by static electricity discharge, then the exposed gate connection pattern becomes electrically connected with the source/drain pattern, causing short defects

Engineering Contradiction:
Improvecircuit integrityVSAvoidinsulating film integrity
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The barrier pattern serves as a protective cushion that absorbs and dissipates static electricity discharge energy before it can reach the gate insulating film. This beforehand cushioning prevents the insulating film from being damaged, thereby maintaining its integrity and preventing electrical shorts between the gate connection pattern and source/drain pattern.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The barrier pattern converts the harmful static electricity discharge into a beneficial protective mechanism. By providing a controlled path for static electricity to discharge through the barrier pattern rather than through the gate insulating film, the harmful electrical energy is redirected to protect the critical insulating film structure.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively prevents damage to the circuit parts from static electricity, maintaining the integrity of the insulating film and preventing electrical shorts, thus enhancing the reliability and performance of the thin film transistor substrate.

Implementation Method 1

a static induction pattern extending from one end of the gate connection pattern towards the first electrode, the static induction pattern comprising a plurality of electrode patterns arranged in parallel, the plurality of electrode patterns being spaced apart from each other in a first direction, and each of the plurality of electrode patterns extending in a second direction perpendicular to the first direction

Methodology Applied
Scientific EffectElectrostatic induction: Electrostatic Induction

Data Source

PatentUS10134777B2Thin film transistor substrate and display device including the same
Publication Date: 2018.11.20 LG DISPLAY CO LTD
  • US10134777B2 patent drawing
  • US10134777B2 patent drawing
  • US10134777B2 patent drawing

AI summary

Disclosed is a thin film transistor substrate capable of preventing a circuit from being damaged by static electricity, and a display device including the same, wherein the thin film transistor substrate includes a substrate having a display area for displaying an image, and a non-display area. The circuit is disposed in the non-display area. The circuit includes a first electrode, an insulating film on the first electrode, and a second electrode on the insulating film. An edge of the first electrode facing the display area extends beyond an edge of the second electrode facing the display area.