Thermal Contact Structures for Device-Level IC Heat Dissipation
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Solution Overview
Problem
As semiconductor devices transition to nanometer technology process nodes, heat dissipation becomes increasingly difficult due to three-dimensional designs, leading to self-heating effects and reduced thermal conductivity, which compromise performance and reliability.
Innovation Solution
Implementing device level thermal dissipation structures, including thermal contacts and conductive materials with tailored properties, such as copper and tungsten, to enhance heat transfer and reduce self-heating effects, while maintaining electrical functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device size is reduced to nanometer technology process nodes, then device density and performance are improved, but heat dissipation becomes more difficult and self-heating effects increase
Solution Approach 1:
The patent divides the heat dissipation function into multiple segments: device-level thermal dissipation structures integrated within the semiconductor device, interconnect-level thermal management through conductive interconnects, and package-level heat sinks. This segmentation allows heat to be managed at multiple scales simultaneously, addressing the heat dissipation challenge while maintaining high device density.
Solution Approach 2:
The patent introduces thermal interface materials and conductive interconnect structures as intermediary elements between the heat-generating channel regions and the heat sink. These intermediaries facilitate efficient heat transfer from the microscopic device level to the macroscopic package level, resolving the contradiction between small device size and effective heat dissipation.
2Power
If three-dimensional designs are implemented, then device performance is improved, but thermal conductivity is reduced and self-heating effects worsen
Solution Approach 1:
The patent applies local quality by implementing thermal dissipation structures specifically at the channel region where heat is generated, rather than uniformly throughout the device. The conductive interconnects are strategically positioned to extract heat from high-power regions, maintaining device performance while locally addressing thermal conductivity issues.
Solution Approach 2:
The patent employs composite material structures combining different thermal conductivity materials in the thermal dissipation pathways. This includes using materials with high thermal conductivity for heat extraction paths while maintaining the three-dimensional device architecture, thus preserving device performance while improving thermal management.
3Temperature
If thermal dissipation structures are added, then heat dissipation is improved, but device complexity increases
Solution Approach 1:
The patent merges the thermal dissipation function with existing device structures by integrating conductive interconnects that serve both electrical connection and heat extraction purposes. This merging approach reduces the need for separate dedicated thermal structures, thereby improving heat dissipation while minimizing increases in device complexity.
Solution Approach 2:
The conductive interconnect structures are designed to perform multiple functions: providing electrical connectivity between device layers and simultaneously serving as thermal pathways for heat extraction. This multi-functionality reduces the overall structural complexity while achieving effective thermal management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structures improve heat dissipation, reduce electromigration, and enhance the performance and reliability of semiconductor devices by effectively managing heat generated in the channel regions.
Implementation Method 1
thermal contacts and conductive materials with tailored properties, such as copper and tungsten, to enhance heat transfer and reduce self-heating effects
Data Source
AI summary
A method for manufacturing an integrated circuit includes forming an active area in a substrate, forming a gate structure on the active area, depositing an insulating layer, etching electrical contact openings to the gate structure and the active area, depositing a first conductive composition in the electrical contact openings to form an electrical contact layer that partially fills the electrical contact openings, filling a remainder of the electrical contact openings to form a plurality of electrical contacts. The method includes etching thermal contact openings to the active area, depositing a second conductive composition in the thermal contact openings to form a thermal contact layer that partially fills the thermal contact openings, wherein the first conductive composition differs from the second conductive composition, filling a remainder of the thermal contact openings to form a plurality of thermal contacts, and thermally connecting the plurality of thermal contacts and a heat dissipation structure.