Thermally Conductive Electrode Layout for Semiconductor Latchup Control
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Solution Overview
Problem
Semiconductor devices face breakdown issues due to heat generation during operation, particularly due to latchup of parasitic transistors caused by inadequate heat dissipation, leading to overcurrent and reduced reliability.
Innovation Solution
Incorporating a fourth electrode with higher thermal conductivity than the third electrode, positioned between the third electrodes and electrically isolated from them, to efficiently dissipate heat generated in the semiconductor part, thereby reducing temperature increases and preventing breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electrode structures are used, then device simplicity is maintained, but heat dissipation is insufficient leading to breakdown
Solution Approach 1:
The electrode structure is segmented into multiple electrodes (third electrode and fourth electrode) arranged in a specific configuration. The third electrode is electrically insulated from the semiconductor part by a first insulating film, while the fourth electrode is electrically isolated from the third electrode. This segmentation allows each electrode to serve specific functions: the third electrode for electrical connection and the fourth electrode primarily for heat dissipation, thereby improving breakdown resistance without excessive complexity
Solution Approach 2:
The fourth electrode serves multiple functions: it acts as a thermal management component by dissipating heat generated in the semiconductor part, and simultaneously serves as an electrical electrode in the device structure. This multi-functionality improves heat dissipation capability while maintaining device structural integrity and avoiding the need for separate dedicated heat dissipation components
2Temperature
If heat dissipation structures are added, then temperature control improves, but device complexity increases
Solution Approach 1:
The heat dissipation function is merged with the electrode structure by making the fourth electrode serve both as an electrical terminal and a thermal management component. The fourth electrode is positioned to effectively dissipate heat generated in the semiconductor part while maintaining electrical isolation from the third electrode through insulating films. This merging approach improves temperature control without adding separate dedicated heat dissipation structures
Solution Approach 2:
The fourth electrode is strategically positioned and configured to address heat dissipation in specific regions where heat generation occurs in the semiconductor part. The electrode arrangement targets local thermal management needs rather than implementing a uniform heat dissipation structure throughout the entire device, thereby improving temperature control efficiency while minimizing overall structural complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively dissipates heat generated in the semiconductor device, preventing latchup and overcurrent issues, thereby enhancing the semiconductor device's resistance to breakdown and operational reliability.
Implementation Method 1
The fourth electrode includes a material having a larger thermal conductivity than a thermal conductivity of a material of the third electrode
Data Source
AI summary
A semiconductor device includes a semiconductor part, a first electrode at a back surface of the semiconductor part; a second electrode at a front surface of the semiconductor part; third and fourth electrodes provided between the semiconductor part and the second electrode. The third and fourth electrodes are arranged in a first direction along the front surface of the semiconductor part. The third electrode is electrically insulated from the semiconductor part by a first insulating film. The third electrode is electrically insulated from the second electrode by a second insulating film. The fourth electrode is electrically insulated from the semiconductor part by a third insulating film. The fourth electrode is electrically isolated from the third electrode. the third and fourth electrodes extend into the semiconductor part. The fourth electrode includes a material having a larger thermal conductivity than a thermal conductivity of a material of the third electrode.